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For continuous-time Found Datasheets File :: 94653    Search Time::2.188ms    
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    PSMN020-150W PSMN020

NXP Semiconductors
Part No. PSMN020-150W PSMN020
OCR Text ...ate-source voltage - 20 v i d continuous drain current t mb = 25 ?c - 73 a t mb = 100 ?c - 51 a i dm pulsed drain current t mb = 25 ?c ...time v dd = 75 v; r d = 2.7 w ; - 34 - ns t r turn-on rise time v gs = 10 v; r g = 5.6 w -79-n...
Description    N-channel TrenchMOS? transistor
N-channel TrenchMOS transistor(N沟道 TrenchMOS晶体

File Size 119.76K  /  7 Page

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    FDP2614

Fairchild Semiconductor
Part No. FDP2614
OCR Text ...e Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) (Note 2) (Note 3) Parameter Ratings ...Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge G...
Description 200V N-Channel PowerTrench MOSFET

File Size 317.13K  /  8 Page

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    NTMFS4108N

ON Semiconductor
Part No. NTMFS4108N
OCR Text ...e?to?source voltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d 22 a t a = 85 c 16 t 10 s t a = 25 c ...time t d(on) v gs = 4.5 v, v ds = 15 v, i d = 1.0 a, r g = 6.0 45 ns rise time t r 60 turn?o...
Description Power MOSFET 30 V, 35 A(30V, 35A, 功率MOSFET)

File Size 66.50K  /  6 Page

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    NTMD6N02R2/D NTMD6N02R2-D

ON Semiconductor
Part No. NTMD6N02R2/D NTMD6N02R2-D
OCR Text ... dgr 20 v gatetosource voltage continuous v gs 12 v thermal resistance junctiontoambient (note 1.) total power dissipation @ t a = 25 ...time t d(on) 12 20 ns rise time (v dd = 16 vdc, i d = 6.0 adc, v gs =45vdc t r 50 90 turnoff d...
Description Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual SO-8 Package
Power MOSFET 6.0 Amps20 Volts

File Size 85.94K  /  8 Page

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    NTHS4101PT1/D

ON Semiconductor
Part No. NTHS4101PT1/D
OCR Text ...0 v dc gate?to?source voltage ? continuous v gs 8.0 v dc drain current ? continuous ? 5 seconds i d i d ?4.8 ?6.7 a total power dissipatio...time t d(on) v dd = ?16 v dc ? 8.0 ? ns rise time t r v gs = ?4.5 v dc ? 28 ? turn?off delay time ...
Description Trench Power MOSFET 20 V P Channel Single ChipFET
20 V, P-Channel Power MOSFET ChipFET Single Package(20V,单P通道ChipFET封装的功率MOSFET) 20五,P沟道功率MOSFET ChipFET的单包(20V的,单P通道ChipFET的封装的功率MOSFET的)

File Size 53.10K  /  6 Page

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    NTF3055-100 NTF3055-100T3G

ON Semiconductor
Part No. NTF3055-100 NTF3055-100T3G
OCR Text ...c gate ? to ? source voltage ? continuous ? non ? repetitive (t p 10 ms) v gs 20 30 vdc vpk drain current ? continuous @ t a = 25 ...time (v dd = 30 vdc, i d = 3.0 adc, v gs = 10 vdc, r g = 9.1 ) (note 3) t d(on) ? 9.4 20 ns ...
Description Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223(3A,60V逻辑电平,N通道 SOT-223 封装的功率MOSFET)
Power MOSFET 3.0 Amps 60 Volts N&#8722;Channel

File Size 130.37K  /  6 Page

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    NTF3055-100T3LF NTF3055-100T1 NTF3055-100-D

ON Semiconductor
Part No. NTF3055-100T3LF NTF3055-100T1 NTF3055-100-D
OCR Text ...gr 60 vdc gatetosource voltage continuous nonrepetitive (t p 10 ms) v gs 20 30 vdc vpk drain current continuous @ t a = 25 c con...time t d(on) 9.4 20 ns rise time (v dd = 30 vdc, i d = 3.0 adc, v gs =10vdc t r 14 30 turnoff de...
Description Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 3A条(丁)|的SOT - 223

File Size 57.66K  /  8 Page

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    NTD6N40/D NTD6N40-D

ON Semiconductor
Part No. NTD6N40/D NTD6N40-D
OCR Text ...dgr 400 vdc gatesource voltage continuous nonrepetitive (t p 10 ms) v gs v gsm 20 40 vdc drain continuous continuous @ 100 c sin...time t d(on) 7.0 10 ns rise time (v dd = 200 vdc, i d = 6 adc, v gs =10vdc t r 11 20 turnoff del...
Description Power MOSFET 6 Amps, 400 Volts N-Channel DPAK
Power MOSFET 6 Amps400 Volts

File Size 40.48K  /  4 Page

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