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2907A 6029E 00209 MSM5840 MX375 QS34X MBRF10 2907A
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    NB3W1200L

ON Semiconductor
Part No. NB3W1200L
OCR Text ...k, nb3w1200l 3.3 v 100/133 mhz dif fer ential 1:12 hcsl or push-pull clock zdb/fanout buf fer for pcle description the nb3n1200k and nb3w1200l dif ferential clock buf fers are db1200z and db1200zl compliant and are designed to work in con...
Description 3.3V 100MHz - 133MHz differential 1:12 HCSL or Push-Pull Clock ZDB - Fanout Buffer

File Size 358.04K  /  26 Page

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Part No. UPC79L15J-T-A UPC79L15J-A UPC79L08J-T
OCR Text ...5 85 db dropout voltage v dif t j = 25 c 0.9 v short circuit current i oshort t j = 25 c, v in = ? 20 v 95 ma peak output current i opeak t j = 25 c 140 190 230 ma temperature coefficient of output voltage ...
Description 15 V FIXED NEGATIVE REGULATOR, PBCY3
8 V FIXED NEGATIVE REGULATOR, PBCY3

File Size 742.77K  /  10 Page

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    STTA812G-TR

STMICROELECTRONICS
Part No. STTA812G-TR
OCR Text ...200 250 300 350 400 450 500 550 dif/dt(a/s) trr(ns) vr=600v tj=125c if=2*if(av) if=0.5*if(av) if=if(av) fig. 5: reverse recovery time versus di f /dt (90% confidence). 0 100 200 300 400 500 0.80 1.00 1.20 1.40 s factor vr=600v if<2*if(av) t...
Description 8 A, 1200 V, SILICON, RECTIFIER DIODE

File Size 228.46K  /  10 Page

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    DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25

Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
Part No. DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25
OCR Text ...covery current Irr - (A) IF QS dif/dt IRM Conditions: Tj = 175C VR = 100V IF = 1000A Stored charge, QS - (C) 1000 100 100 0.1 1.0 10 Rate of decay of on-state current dif/dt - (A/s) 100 10 0.1 1.0 10 Rate of deca...
Description Rectifier Diode 1849 A, 2900 V, SILICON, RECTIFIER DIODE

File Size 94.85K  /  7 Page

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    DS1107SG37 DS1107SG39 DS1107SG40 DS1107SG38 DS1107SG36 DS1107SG35 DS1107SG

DYNEX SEMICONDUCTOR LTD
DYNEX[Dynex Semiconductor]
Part No. DS1107SG37 DS1107SG39 DS1107SG40 DS1107SG38 DS1107SG36 DS1107SG35 DS1107SG
OCR Text ...rge, QS - (C) 1000 100 dif/dt 100 0.1 IRM 1.0 10 100 10 0.1 1.0 10 100 Rate of decay of on-state current, dif/dt - (A/s) Rate of decay of forward current, dif/dt - (A/s) Fig.4 Total stored charge...
Description Rectifier Diode

File Size 96.08K  /  7 Page

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    DS1109SG47 DS1109SG46 DS1109SG50 DS1109SG DS1109SG45 DS1109SG48 DS1109SG49

DYNEX[Dynex Semiconductor]
Part No. DS1109SG47 DS1109SG46 DS1109SG50 DS1109SG DS1109SG45 DS1109SG48 DS1109SG49
OCR Text ...overy current, Irr - (A) IF QS dif/dt IRM Stored charge, QS - (C) 1000 100 100 0.1 1.0 10 Rate of decay of on-state current, dif/dt - (A/s) 100 10 0.1 1.0 10 Rate of decay of forward current, dif/dt - (A/s) 100 ...
Description Rectifier Diode

File Size 96.53K  /  7 Page

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Part No. SS111A
OCR Text ...21.0 110 11.0 200 20.0 min. dif. 15 1.5 20 2.0 15 1.5 25 2.5 30 3.0 50 5.0 200 20.0 0 c max. op. 65 6.5 140 14.0 117 11.7 190 19.0 400 40.0 90 9.0 185 18.5 min. rel. 65 6.5 140 14.0 20 2.0 80 8.0 230 23.0 90 9.0 185 18.5 min. d...
Description MAGNETIC FIELD SENSOR-HALL EFFECT, -6-6mT, 0.40V, RECTANGULAR, SURFACE MOUNT

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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ... 14 - Typical Stored Charge vs. dif/dt 6 www.irf.com GA100TS120U 240 VR = 72 0V TJ = 12 5C TJ = 25 C 250 VR = 72 0V TJ = 12 5C TJ = 25 C 200 200 IF = 200A IF = 100A IF = 50A I F = 200A I F = 100A I F = 50A trr - (...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

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