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For duty Found Datasheets File :: 148635 Search Time::1.953ms
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				Anpec Electronics Coropration
Part No.	APW7136ACI-TRL APW7136BCI-TRL APW7136C APW7136CCI-TRL APW7136A APW7136B
OCR Text	...t LX Leakage Current LX Maximum duty Cycle VEN=0V, VLX=0V or 5V, VIN = 5V FB=GND 0.8 0.7 -1 92 1.0 0.6 0.9 95 1.2 1.2 1 98 MHz A A % OUTPUT OVER VOLTAGE PROTECTION APW7136A VOVP Over Voltage Threshold APW7136B APW7136C OVP Hysteresis OV...
Description	1MHz, High-Efficiency, Step-Up Converter for 2 to 8 White LEDs
File Size	419.04K / 15 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MTA55N02N3
OCR Text	... 2. pulse width 300 s, duty cycle 2%. 3. surface mounted on 1 in2 copper pad of fr-4 board, t 5s; 270 c/w when mounted on minimum copper pad. thermal performance parameter symbol limit unit ...
Description	20V N-CHANNEL Enhancement Mode MOSFET
File Size	261.35K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDFMA2P029Z08 FDFMA2P029Z
OCR Text	...lse Test : Pulse Width < 300us, duty Cycle < 2.0% 3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. FDFMA2P029Z Rev.B1 3 www.fairchildsemi.com FDFMA2...
Description	-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.1A, 95m Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode .20V, .3.1A, 95m Integrated P-Channel PowerTrench? MOSFET and Schottky Diode .20V, .3.1A, 95m
File Size	301.17K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDFMA2N028Z08 FDFMA2N028Z
OCR Text	...Pulse Test: Pulse Width < 300s, duty cycle < 2.0%. 3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. FDFMA2N028Z Rev.B1 3 www.fairchildsemi.com FDFMA...
Description	20V Integrated N-Channel PowerTrenchMOSFET and Schottky Diode Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode 20V, 3.7A, 68mヘ Integrated N-Channel PowerTrench庐 MOSFET and Schottky Diode 20V, 3.7A, 68m惟 Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
File Size	551.33K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDB3502
OCR Text	...Pulse Test: Pulse Width < 300s, duty cycle < 2.0%. 3: Starting TJ = 25C, L = 3mH, IAS = 6A, VDD = 75V, VGS = 10V. (c)2008 Fairchild Semiconductor Corporation FDB3502 Rev.C2 2 www.fairchildsemi.com FDB3502 N-Channel Power Trench(...
Description	N-Channel Power Trench? MOSFET 75V, 14A, 47mΩ N-Channel Power Trench㈢ MOSFET 75V, 14A, 47mヘ
File Size	274.41K / 6 Page	View it Online	Download Datasheet

				IDT[Integrated Device Technology] Integrated Device Technology, Inc. Integrated Device Techn...
Part No.	IDT54FCT162646AT IDT54FCT162646ATE IDT54FCT162646ATEB IDT54FCT162646ATPA IDT54FCT162646ATPAB IDT54FCT162646ATPF IDT54FCT162646ATPFB IDT54FCT162646ATPV IDT54FCT162646ATPVB IDT54FCT162646CT IDT54FCT162646CTE IDT54FCT162646CTEB IDT54FCT162646CTPA IDT54FCT162646CTPAB IDT54FCT162646CTPF IDT54FCT162646CTPFB IDT54FCT162646CTPV IDT54FCT162646CTPVB IDT54FCT162646ET IDT54FCT162646ETE IDT54FCT162646ETEB IDT54FCT162646ETPA IDT54FCT162646ETPAB IDT54FCT162646ETPF IDT54FCT162646ETPFB IDT54FCT162646ETPV IDT54FCT162646ETPVB IDT54FCT162646T IDT54FCT162646TE IDT54FCT162646TEB IDT54FCT162646TPA IDT54FCT162646TPAB IDT54FCT162646TPF IDT54FCT162646TPFB IDT54FCT16646TPVB IDT54FCT162646TPV IDT54FCT162646TPVB IDT54FCT16646AT IDT54FCT16646ATE IDT54FCT16646ATEB IDT54FCT16646ATPA IDT54FCT16646ATPAB IDT54FCT16646ATPF IDT54FCT16646ATPFB IDT54FCT16646ATPV IDT54FCT16646ATPVB IDT54FCT16646CT IDT54FCT16646CTE IDT54FCT16646CTEB IDT54FCT16646CTPA IDT54FCT16646CTPAB IDT54FCT16646CTPF IDT54FCT16646CTPFB IDT54FCT16646CTPV IDT54FCT16646CTPVB IDT54FCT16646ET IDT54FCT16646ETEB IDT54FCT16646ETPA IDT54FCT16646ETPAB IDT54FCT16646ETPF IDT54FCT16646ETPFB IDT54FCT16646ETPV IDT54FCT16646ETPVB IDT54FCT16646T IDT54FCT16646TE IDT54FC
OCR Text	...xOE= GND One Input Toggling 50% duty Cycle VCC = Max. Outputs Open fCP = 10MHz (xCLKBA) 50% duty Cycle xDIR = xOE = GND One Bit Toggling fi = 5MHz 50% duty Cycle VCC = Max. Outputs Open fCP = 10MHz (xCLKBA) 50% duty Cycle xDIR = xOE = GND S...
Description	FAST CMOS 16-BIT BUS TRANSCEIVER/ REGISTERS (3-STATE) CAP 33UF 6V 20% TANT SMD-3528-12 TR-7-PL SN100% LOWESR-4000 CAP 4.7UF 16V 10% TANT SMD-3528-12 TR-7-PL GOLD LOWESR-3000 CAP 4.7UF 16V 10% TANT SMD-3528-12 TR-7-PL SN100% LOWESR-3000 CAP 4.7UF 16V 20% TANT SMD-3528-12 TR-7-PL GOLD LOWESR-3000 CAP 4.7UF 16V 20% TANT SMD-3528-12 TR-7-PL SN/PB5% LOWESR-3000 CAP 33UF 4V 10% TANT SMD-3528-12 TR-7-PL SN100% LOWESR-3500 CAP 10UF 25V 20% TANT SMD-7343-31 TR-7-PL SN/PB5% LOWESR-400 FAST CMOS 16-BIT BUS TRANSCEIVER/ REGISTERS (3-STATE) 快速CMOS 16位总线收发寄存器（3态） CAP 10UF 25V 20% TANT SMD-7343-31 TR-7-PL GOLD LOWESR-400 快速CMOS 16位总线收发寄存器（3态） CAP 10UF 50V 20% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-700 快速CMOS 16位总线收发寄存器（3态） CAP 100UF 6V 10% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-150 快速CMOS 16位总线收发寄存器（3态） CAP 10UF 35V 20% TANT SMD-7343-31 TR-7-PL GOLD LOWESR-400 快速CMOS 16位总线收发寄存器（3态）
File Size	177.37K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text	...S, TJ 175C Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C . Calculated continuous current based on ...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
File Size	122.02K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010E
OCR Text	...fig. 11) Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. Starting TJ = 25C, L = 260H RG = 25, IAS = 50A, VGS =10V (See Figure 50A, ISD 12) di/dt 23...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
File Size	143.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text	...SS, TJ 175C Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C . Calculated continuous current based on maxim...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
File Size	144.82K / 10 Page	View it Online	Download Datasheet

For duty Found Datasheets File :: 148635 Search Time::1.953ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |

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