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    UPD7720AC

NEC
Part No. UPD7720AC
OCR Text ...essor and microcomputer devices fabricated at NEC Roseville and assembled at NEC Roseville or NEC Singapore. (Signatures on file) Prepared by D. Yee RQC Dept. Roseville Mfg. Approved by M. Mahal RQC Dept. Roseville Mfg. Please refer a...
Description QUARTERLY MICROPROCESSOR/MICROCOMPUTER RELIABILITY REPORT

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    AD1868 AD1868N AD1868N-J AD1868R AD1868R-J

AD[Analog Devices]
Part No. AD1868 AD1868N AD1868N-J AD1868R AD1868R-J
OCR Text ...single +5 V power supply. It is fabricated on Analog Devices' ABCMOS wafer fabrication process. The monolithic chip includes CMOS logic elements, bipolar and MOS linear elements, and laser-trimmed thin-film resistor elements. Careful design...
Description Single Supply Dual 18-Bit Audio DAC

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    Mitsubishi
Part No. M6MGB_T160S2BVP M6MGB E99003_A
OCR Text ...e memory W version Ta=-20 ~ 85C fabricated by CMOS technology for the peripheral circuit * Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch and DINOR(DIvided bit-line NOR) architecture for the memory cell. 2M-bits SRAM is a 262144 bytes / ...
Description 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT (1,048,576 -WORD BY 16-BIT 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP E99004_A
OCR Text ...e memory W version Ta=-20 ~ 85C fabricated by CMOS technology for the peripheral circuit * Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch and DINOR(DIvided bit-line NOR) architecture for the memory cell. 4M-bits SRAM is a 524288bytes / 2...
Description 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M6MGB_T162S2BVP M6MGB E99005_A M6MGB162S2BVP M6MGT162S2BVP
OCR Text ...performance non-volatile memory fabricated by CMOS * Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell. 2M-bits SRAM is a 262144bytes uns...
Description 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M6MGB_T162S4BVP M6MGB M6MGB162S4BVP M6MGT162S4BVP E99006_A
OCR Text ...performance non-volatile memory fabricated by CMOS W version Ta=-20 ~ 85C technology for the peripheral circuit and DINOR(DIvided * Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch bit-line NOR) architecture for the memory cell. 4M-bits SR...
Description 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system

File Size 237.13K  /  29 Page

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    Mitsubishi
Part No. M6MGB_T166S2BWG M6MGB M6MGT166S2BWG E99007_A
OCR Text ...performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell. 2M-bits SRAM is a 131,072words unsynchronous SRAM fabricated by silicon-gate CMOS tec...
Description 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY &
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
From old datasheet system

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    Mitsubishi
Part No. M6MGB_T166S4BWG M6MGB E99008_A
OCR Text ...performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell. 4M-bits SRAM is a 262,144words unsynchronous SRAM fabricated by silicon-gate CMOS tec...
Description 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system

File Size 251.09K  /  30 Page

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    Mitsubishi
Part No. M6MGB E99007
OCR Text ...performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell. 2M-bits SRAM is a 131,072words unsynchronous SRAM fabricated by silicon-gate CMOS tec...
Description 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system

File Size 256.64K  /  30 Page

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For fabricated Found Datasheets File :: 17162    Search Time::1.609ms    
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