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  hardness Datasheet PDF File

For hardness Found Datasheets File :: 2108    Search Time::1.64ms    
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    79C0832 79C0832RPQE-15 79C0832RPQE-20 79C0832RPQH-15 79C0832RPQH-20 79C0832RPQI-15 79C0832RPQI-20 79C0832RPQK-15 79C0832

Maxwell Technologies
ETC[ETC]
Part No. 79C0832 79C0832RPQE-15 79C0832RPQE-20 79C0832RPQH-15 79C0832RPQH-20 79C0832RPQI-15 79C0832RPQI-20 79C0832RPQK-15 79C0832RPQK-20 79C0832RT1QE-15 79C0832RT1QE-20 79C0832RT1QH-15 79C0832RT1QH-20 79C0832RT1QI-15 79C0832RT1QI-20 79C0832RT1QK-15 79C0832RT1QK-20 79C0832RT2QE-15 79C0832RT2QE-20 79C0832RT2QH-15 79C0832RT2QH-20 79C0832RT2QI-15 79C0832RT2QI-20 79C0832RT2QK-15 79C0832RT2QK-20 79C0832RT4QE-15 79C0832RT4QE-20 79C0832RT4QH-15 79C0832RT4QH-20 79C0832RT4QI-15 79C0832RT4QI-20 79C0832RT4QK-15 79C0832RT4QK-20 79C0832RPQE15 79C0832RPQH15 79C0832RPQI15 79C0832RPQI20 79C0832RPQK20 79C0832RT1QE20 79C0832RT2QK15 79C0832RT2QI20 79C0832RT2QI15 79C0832RT2QH20 79C0832RT2QH15 79C0832RT2QE20 79C0832RT2QE15 79C0832RT1QK20 79C0832RT1QK15 79C0832RT1QI20 79C0832RT1QI15 79C0832RT1QH20 79C0832RT1QH15 79C0832RT1QE15 79C0832RPQK15 79C0832RPQH20 79C0832RPQE20
OCR Text ...al space radiation * Total dose hardness: - >100 krad (Si), depending upon space mission * Excellent Single event effects - SELTH > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode - SEU = 18 MeV/mg/cm2 write mode * Package: 96 pin RAD-PAK(R)...
Description 8 Megabit (256K x 32-Bit) EEPROM MCM

File Size 452.52K  /  16 Page

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    IRHN9230

IRF[International Rectifier]
Part No. IRHN9230
OCR Text ...FETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, t...
Description TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)

File Size 87.57K  /  4 Page

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    IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230

IRF[International Rectifier]
Part No. IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230
OCR Text ...ested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using t...
Description 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

File Size 123.99K  /  8 Page

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    FRX130D FRX130D1 FRX130D3 FRX130H FRX130H4 FRX130R FRX130R1 FRX130R3 FRX130R4 FN3144

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FRX130D FRX130D1 FRX130D3 FRX130H FRX130H4 FRX130R FRX130R1 FRX130R3 FRX130R4 FN3144
OCR Text ...tance as low as 25m. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 with...
Description Radiation Hardened N-Channel Power MOSFETs 6 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system

File Size 34.94K  /  5 Page

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    FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R FSTYC9055R1 FSTYC9055R3 FSTYC9055R4 FN4755

INTERSIL[Intersil Corporation]
Part No. FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R FSTYC9055R1 FSTYC9055R3 FSTYC9055R4 FN4755
OCR Text ...ed with 100K RADs of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SE...
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
From old datasheet system

File Size 73.87K  /  8 Page

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    FSYC9055D FSYC9055D1 FSYC9055D3 FSYC9055R FSYC9055R1 FSYC9055R3 FSYC9055R4

INTERSIL[Intersil Corporation]
Part No. FSYC9055D FSYC9055D1 FSYC9055D3 FSYC9055R FSYC9055R1 FSYC9055R3 FSYC9055R4
OCR Text ...ed with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Harris portfolio of SEGR...
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

File Size 51.24K  /  8 Page

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    28C011TRT2F 28C011TRT2FB 28C011TRT2FE 28C011TRT2FI 28C011TRT2FS 28C011TRPFB12 28C011TRPFB15 28C011TRPFB20 28C011TRPFS20

Maxwell Technologies
ETC
Part No. 28C011TRT2F 28C011TRT2FB 28C011TRT2FE 28C011TRT2FI 28C011TRT2FS 28C011TRPFB12 28C011TRPFB15 28C011TRPFB20 28C011TRPFS20 28C011TRT1FS20 28C011TRT2FS20 28C011TRT4FS20 28C011TRPFS12 28C011TRPFS15 28C011TRT1FS12 28C011TRT2FS12 28C011TRT1FS15 28C011TRT2FS15 28C011TRT4FS12 28C011TRT4FS15 28C011TRPFE12 28C011TRPFE20 28C011TRT1FE20 28C011TRT2FE20 28C011TRT4FE20 28C011TRT1FB12 28C011TRT1FB15 28C011TRT1FB20 28C011TRT1FE15 28C011TRT1FE12 28C011TRPFI12 28C011TRT1FI12 28C011TRT4FI12 28C011TRT2FI12 28C011TRT2FB12 28C011TRT2FB15 28C011TRT2FB20 28C011TRPFE15 28C011TRT1FI20
OCR Text ...al space radiation * Total dose hardness: - > 100 krad (Si), depending upon space mission * Excellent Single Event Effects: - No Latchup > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode * Package: - 32-pin RAD-PAK(R) flat pack package - JED...
Description 1 megabit (128K x 8-bit) - EEPROM
1 Megabit (128K x 8-Bit) EEPROM

File Size 239.71K  /  16 Page

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    FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FSYC055R3 FSYC055R4 FN4526

INTERSIL[Intersil Corporation]
Part No. FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FSYC055R3 FSYC055R4 FN4526
OCR Text ...ed with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SE...
Description Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
From old datasheet system

File Size 48.80K  /  8 Page

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    IRHN7450SE

IRF[International Rectifier]
Part No. IRHN7450SE
OCR Text ...FETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, t...
Description TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)

File Size 80.82K  /  4 Page

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    JM38510_11103BEA JM38510_11103BXA JM38510_11104BEA JM38510_11104BXA DG184AP_883 DG185AP_883 DG184BP DG183AP_883 DG183BP

http://
TEMIC[TEMIC Semiconductors]
TEMICs
Part No. JM38510_11103BEA JM38510_11103BXA JM38510_11104BEA JM38510_11104BXA DG184AP_883 DG185AP_883 DG184BP DG183AP_883 DG183BP DG183 DG184 DG185 JM38510/11104BEA JM38510/11103BEA JM38510/11104BXA JM38510/11103BXA DG184AP/883 DG183AP/883 DG185AP/883
OCR Text ...eak-Before-Make Switching D Rad hardness Benefits D D D D D Low Distortion Eliminates Large Signal Errors High Precision Improved Channel Isolation Eliminates Inadvertent Shorting Between Channels D Fault Protection Applications D D...
Description High-Speed Drivers with Dual DPST JFET Switches

File Size 110.99K  /  8 Page

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For hardness Found Datasheets File :: 2108    Search Time::1.64ms    
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