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  hemt Datasheet PDF File

For hemt Found Datasheets File :: 1566    Search Time::2.203ms    
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    CLF1G0035S-50 CLF1G0035-50

NXP Semiconductors
Part No. CLF1G0035S-50 CLF1G0035-50
OCR Text ...iers with first generation gan hemt technology from nxp. frequency of operation is from dc to 3.5 ghz. [1] pulsed rf; t p = 100 ? s; ? = 10 %. [1] 2-tone cw; ? f=1mhz. clf1g0035-50; clf1g0035s-50 broadband rf power gan hemt rev. 2 ?...
Description Broadband RF power GaN hemt

File Size 315.06K  /  19 Page

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    CLF1G0035S-100 CLF1G0035-100

NXP Semiconductors
Part No. CLF1G0035S-100 CLF1G0035-100
OCR Text ...fiers with first generation gan hemt te chnology from nxp. frequency of operation is from dc to 3.5 ghz. [1] pulsed rf; t p =50 ? s; ? =1 %. [1] 2-tone cw; ? f=1mhz. 1.2 features and benefits ? frequency of operation is from dc to 3....
Description Broadband RF power GaN hemt

File Size 299.68K  /  20 Page

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    MGF4931AM

Mitsubishi Electric Semiconductor
Part No. MGF4931AM
OCR Text hemt (4pin flat lead package) DESCRIPTION The MGF4931AM super-low noise hemt (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost perform...
Description SUPER LOW NOISE InGaAs hemt (4pin flat lead package)

File Size 48.11K  /  5 Page

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    CLF1G0035-100P CLF1G0035S-100P

NXP Semiconductors
Part No. CLF1G0035-100P CLF1G0035S-100P
OCR Text ...35s-100p broadband rf power gan hemt rev. 2 ? 20 june 2013 objective data sheet table 1. cw and pulsed rf application information typical rf performance at t case = 25 ? c; i dq = 330 ma; v ds = 50 v in a class-ab broadband demo board. t...
Description Broadband RF power GaN hemt

File Size 189.68K  /  16 Page

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    MGF4851A

Mitsubishi Electric Semiconductor
Part No. MGF4851A
OCR Text hemt (Leadless Ceramic Package) DESCRIPTION The MGF4851A hemt (High Electron Mobility Transistor) is designed for use in S to K band amplifiers and oscillators. The lead-less ceramic package assures minimum parasitic losses. Outline ...
Description SUPER LOW NOISE InGaAs hemt (Leadless Ceramic Package)

File Size 133.53K  /  5 Page

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    MGF4954A MGF4953A

Mitsubishi Electric Semiconductor
Part No. MGF4954A MGF4953A
OCR Text hemt (Leadless Ceramic Package) DESCRIPTION The MGF4953A/MGF4954A super-low noise hemt (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. ...
Description SUPER LOW NOISE InGaAs hemt (Leadless Ceramic Package)

File Size 203.88K  /  5 Page

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    MGF4934AM

Mitsubishi Electric Semiconductor
Part No. MGF4934AM
OCR Text hemt (4pin flat lead package) DESCRIPTION The MGF4934AM super-low noise hemt (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost perform...
Description SUPER LOW NOISE InGaAs hemt (4pin flat lead package)

File Size 104.87K  /  5 Page

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    MAGX-002735-SB0PPR MAGX-002735-040L00

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
Part No. MAGX-002735-SB0PPR MAGX-002735-040L00
OCR Text hemt pulsed power transistor 2.7 - 3.5 ghz, 40w peak, 300u s pulse, 10% duty cycle magx-002735-040l00 production v1 26 march 12 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44....
Description GaN hemt Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle

File Size 311.81K  /  7 Page

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    MGF4953B

Mitsubishi Electric Semiconductor
Part No. MGF4953B
OCR Text hemt (Leadless Ceramic Package) DESCRIPTION The MGF4953B super-low noise hemt (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawi...
Description SUPER LOW NOISE InGaAs hemt Leadless Ceramic Package

File Size 116.27K  /  5 Page

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    MAGX-000035-030000 MAGX-000035-SB1PPR MAGX-000035-030000-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
Part No. MAGX-000035-030000 MAGX-000035-SB1PPR MAGX-000035-030000-15
OCR Text hemt power transistor 30w cw, 30 mhz - 3.5 ghz magx - 000035 - 030000 production v1 10 feb 12 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacif...
Description GaN hemt Power Transistor 30W CW, 30 MHz - 3.5 GHz

File Size 921.51K  /  7 Page

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For hemt Found Datasheets File :: 1566    Search Time::2.203ms    
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