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  high-rugged Datasheet PDF File

For high-rugged Found Datasheets File :: 9222    Search Time::1.609ms    
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    AME8815BEDS250 AME8815AEBT180 AME8815AEGT180 AME8815BEBT180 AME8815BEGT180 AME8815AEBT330 AME8815AEGT330 AME8815BEBT330

AME[Analog Microelectronics]
Part No. AME8815BEDS250 AME8815AEBT180 AME8815AEGT180 AME8815BEBT180 AME8815BEGT180 AME8815AEBT330 AME8815AEGT330 AME8815BEBT330 AME8815BEGT330 AME8815AEBT475 AME8815BEBT475 AME8815BEB AME8815AEBT500 AME8815BEBT500 AME8815BECS330 AME8815AEGT475 AME8815BEGT475 AME8815BECS150 AME8815AECS150 AME8815BEGT500 AME8815 AME8815AEBT150 AME8815AEBT250 AME8815AECS180 AME8815AECS250 AME8815AECS330 AME8815AECS475 AME8815AECS500 AME8815AEDS150 AME8815AEDS180 AME8815AEDS250 AME8815AEDS330 AME8815AEDS475 AME8815AEDS500 AME8815AEGT150 AME8815AEGT250 AME8815AEGT500 AME8815BEBT150 AME8815BEBT250 AME8815BECS180 AME8815BECS250 AME8815BECS475 AME8815BECS500 AME8815BEDS150 AME8815BEDS180 AME8815BEDS330 AME8815BEDS475 AME8815BEDS500 AME8815BEGT150 AME8815BEGT250
OCR Text ...olytic. The benefit is low ESR, high capacitance, and low overall cost. A second capacitor is recommended between the input and ground to stabilize Vin. The input capacitor should be at least 0.1F to have a beneficial effect. All capacitors...
Description 1.5A CMOS LDO

File Size 106.32K  /  17 Page

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    APM4835 APM4835KC-TR APM4835KC-TU

Anpec Electronics Corporation
ETC[ETC]
ANPEC[Anpec Electronics Coropration]
http://
Part No. APM4835 APM4835KC-TR APM4835KC-TU
OCR Text ...= 24m(typ.) @ VGS = -4.5V Super High Density Cell Design Reliable and Rugged SO-8 Package Pin Description S S S G 1 2 3 4 8 7 6 5 D D D D Applications * Power Management in Notebook Computer, Portable Equipment and Batte...
Description P-Channel Enhancement Mode MOSFET

File Size 125.16K  /  9 Page

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    BUPD1520

Power Innovations Ltd
Power Innovations Limited
Part No. BUPD1520
OCR Text ... remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO-220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,32 14,55 1,32 1,23 1...
Description NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

File Size 114.07K  /  5 Page

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    IRF530FI IRF530 3003

SGS Thomson Microelectronics
STMicroelectronics
Part No. IRF530FI IRF530 3003
OCR Text ...E DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY D...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 46.69K  /  6 Page

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    IRF530FP 5758

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. IRF530FP 5758
OCR Text ...ATION ORIENTED CHARACTERIZATION HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 2 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTER s AUTOMOTIVE ENVRONMENT (INJECTION, ABS...
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system

File Size 76.48K  /  5 Page

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    2N7002

PANJIT[Pan Jit International Inc.]
Part No. 2N7002
OCR Text ...effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. ...Rugged and reliable. * High saturation current capability. * High-speed switcing. * CMOS logic compa...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 88.00K  /  6 Page

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    CMT2N7002E

Champion Microelectronic Corporation
ETC[ETC]
List of Unclassifed Manufacturers
Part No. CMT2N7002E
OCR Text high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. This product is particularly suited for low voltage, low current applicati...
Description CMT2N7002E

File Size 160.29K  /  6 Page

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    HGT1S20N60C3R HGT1S20N60C3RS HGTG20N60C3R HGTP20N60C3R

FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S20N60C3R HGT1S20N60C3RS HGTG20N60C3R HGTP20N60C3R
OCR Text ...trol operation as well as other high voltage switching applications. These devices demonstrate RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHSTAND TIME (SCWT) conditions. The parts have ULTRAFAST (UFS) switching sp...
Description 40A/ 600V/ Rugged UFS Series N-Channel IGBTs
40A, 600V, Rugged UFS Series N-Channel IGBTs

File Size 107.60K  /  6 Page

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