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MICROSEMI[Microsemi Corporation]
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Part No. |
LX5512E-LQ LX5512E
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OCR Text |
...nction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 34 dB power gain between 2.4-2.5GHz, at a low quiescent current of 50 mA.
For 19dBm OFDM output power (64QAM, 54Mbps), the PA pro... |
Description |
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
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File Size |
218.63K /
10 Page |
View
it Online |
Download Datasheet |
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RF MICRO DEVICES INC
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Part No. |
RFGA2012SR RFGA2012PCK-410 RFGA2012TR13
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OCR Text |
... ce ) 5.5 v dc supply current (ic) 35 ma cw input power, 2:1 output vswr, 5.0v +20 dbm cw input power, 2:1 output vswr, 5.5v +15 dbm output load vswr at p3db 5:1 dbm operating temperature range (t l ) -40 to +85 c operating junction temper... |
Description |
50 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER InGaP HBT LOW POWER LINEAR AMPLIFIER
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File Size |
1,536.03K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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