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  idpuls Datasheet PDF File

For idpuls Found Datasheets File :: 260    Search Time::2.922ms    
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    BSS145 Q67000-S132

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BSS145 Q67000-S132
OCR Text ... C DC drain current, pulsed idpuls 0.88 TA = 25 C Power dissipation Ptot 0.36 W TA = 25 C Semiconductor Group 1 Sep-13-1996 BSS 145 Maximum Ratings Parameter Chip or operating temperature Storage temperatur...
Description SIPMOS Small-Signal Transistor (N channel Enhancement mode)
SIPMOS ? Small-Signal Transistor

File Size 137.62K  /  8 Page

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    Q67000-S127 BSP318S

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. Q67000-S127 BSP318S
OCR Text ...n current, pulsed TA = 25 C idpuls 10.4 E AS Avalanche energy, single pulse ID = 2.6 A, V DD = 25 V, RGS = 25 L = 10 mH, Tj = 25 C mJ 60 E AR IAR Avalanche energy, periodic limited by Tj(max) Avalanche current, repeti...
Description SIPMOS Small-Signal Transistor(N channel Enhancement mode Logic Level Avalanche rated) SIPMOS小信号晶体管(N通道增强模式的逻辑电平雪崩额定
SIPMOS ? Small-Signal Transistor
From old datasheet system

File Size 128.08K  /  8 Page

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    C67078-S1343-A2 BUZ92

Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. C67078-S1343-A2 BUZ92
OCR Text ... Symbol Values 3.3 Unit A ID idpuls 13 TC = 25 C Pulsed drain current TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 3.3 6 mJ ID = 3.3 ...
Description Power MOSFET
From old datasheet system
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

File Size 176.27K  /  9 Page

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    Q62702-S206 BSS100 Q62702-S499 Q62702-S007

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-S206 BSS100 Q62702-S499 Q62702-S007
OCR Text ... C DC drain current, pulsed idpuls 0.9 TA = 25 C Power dissipation Ptot 0.63 W TA = 25 C Semiconductor Group 1 12/05/1997 BSS 100 Maximum Ratings Parameter Chip or operating temperature Storage temperature ...
Description SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
SIPMOS ? Small-Signal Transistor
From old datasheet system

File Size 79.04K  /  7 Page

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    BSP170

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BSP170
OCR Text ...Symbol Values -1.7 Unit A ID idpuls -6.8 TA = 25 C DC drain current, pulsed TA = 25 C Avalanche energy, single pulse EAS 8 mJ ID = -1.7 A, VDD = -25 V, RGS = 25 L = 3.23 mH, Tj = 25 C Gate source voltage Power dissip...
Description INNOLINE: RP100-xxxxSB - Single Outputs up to 30A; Input/Output 1.6kVDC Isolation; Adjustable Output Voltage; No Minimum Load; Under -Voltage Lockout
SIPMOS Small-Signal Transistor (P channel Enhancement mode Avalanche rated)
SIPMOS ? Small-Signal Transistor
From old datasheet system

File Size 100.52K  /  8 Page

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    BSP171 Q67000-S224

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BSP171 Q67000-S224
OCR Text ...Symbol Values -1.7 Unit A ID idpuls -6.8 TA = 24 C DC drain current, pulsed TA = 25 C Avalanche energy, single pulse EAS 8 mJ ID = -1.7 A, VDD = -25 V, RGS = 25 L = 3.23 mH, Tj = 25 C Gate source voltage Power dissip...
Description From old datasheet system
SIPMOS ? Small-Signal Transistor
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level Avalanche rated)

File Size 100.08K  /  8 Page

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    BSP17 Q67000-S220 BSP17Q67000-S220

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BSP17 Q67000-S220 BSP17Q67000-S220
OCR Text ... Symbol Values 3.2 Unit A ID idpuls 12.8 TA = 27 C DC drain current, pulsed TA = 25 C Avalanche energy, single pulse EAS 6 mJ ID = 3.2 A, VDD = 25 V, RGS = 25 L = 586 H, Tj = 25 C Gate source voltage Power dissipatio...
Description TRANSISTOR MOSFET SMD SOT 223 N KANAL
INNOLINE: RP100-S_DI - Single Output up to 25A Dual Outputs Total Power up to 100W- Input/Output 1.6kVDC Isolation- Adjustable Output Voltage
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
SIPMOS ? Small-Signal Transistor
From old datasheet system

File Size 139.56K  /  9 Page

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    BSP372 Q67000-S300 BSP372E-6327 BSP372E6327

SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BSP372 Q67000-S300 BSP372E-6327 BSP372E6327
OCR Text ... Symbol Values 1.7 Unit A ID idpuls 6.8 TA = 28 C DC drain current, pulsed TA = 25 C Avalanche energy, single pulse EAS 45 mJ ID = 1.7 A, VDD = 25 V, RGS = 25 L = 23.3 mH, Tj = 25 C Gate source voltage Gate-source pe...
Description 1.7 A, 100 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated SIPMOS小信号晶体管(N通道增强模式逻辑层次额定雪崩
1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system

File Size 166.09K  /  9 Page

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    BSP373 Q67000-S301

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BSP373 Q67000-S301
OCR Text ... Symbol Values 1.7 Unit A ID idpuls 6.8 TA = 28 C DC drain current, pulsed TA = 25 C Avalanche energy, single pulse EAS 45 mJ ID = 1.7 A, VDD = 25 V, RGS = 25 L = 23.3 mH, Tj = 25 C Gate source voltage Power dissipat...
Description SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
From old datasheet system

File Size 167.05K  /  9 Page

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    BUZ104L C67078-S1358-A2 BUZ104LE3046

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BUZ104L C67078-S1358-A2 BUZ104LE3046
OCR Text ...Symbol Values 17.5 Unit A ID idpuls 70 TC = 29 C Pulsed drain current TC = 25 C Avalanche energy, single pulse EAS 35 dv/dt 6 mJ ID = 17.5 A, VDD = 25 V, RGS = 25 L = 114 H, Tj = 25 C Reverse diode dv/dt kV/s IS =...
Description SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance) SIPMOS功率晶体管(N通道增强模式雪崩额定逻辑电平dv /额定的胸苷低电阻
From old datasheet system
SIPMOS ? Power Transistor
N-Channel SIPMOS Power Transistor

File Size 210.09K  /  9 Page

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For idpuls Found Datasheets File :: 260    Search Time::2.922ms    
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