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ingaas Datasheet PDF File

For ingaas Found Datasheets File :: 2165 Search Time::2.5ms
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				Ericsson Microelectronics
Part No.	PGR20301
OCR Text	...t * FC/PC, SC or ST connector * ingaas PIN photo diode with low noise GaAs MMIC preamplifier * AC-coupled, single-ended data output * Operates between 1250 nm and 1620 nm * 1.7 GHz typical bandwidth * -25 dBm typical sensitivity * +0.5 dBm ...
Description	PIN Receiver Module for 2.5 Gb/s 密码接收模组/ 2.5千兆
File Size	341.52K / 4 Page	View it Online	Download Datasheet

				Ericsson Microelectronics
Part No.	PGR20312
OCR Text	...t * FC/PC, SC or ST connector * ingaas APD with low noise GaAs MMIC preamplifier * AC-coupled, differential data output * Operates between 1250 nm and 1620 nm * 2.0 GHz minimum bandwidth * -34 dBm typical sensitivity * -3 dBm typical overlo...
Description	APD Receiver Module up to 3 Gb/s Circular Connector; Body Material:Aluminum Alloy; Series:KPT01; No. of Contacts:32; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
File Size	328.83K / 4 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	FPD7612P70
OCR Text	... packaged depletion mode AlGaAs/ingaas pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 200 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. . The FPD7612 is also available i...
Description	HI-FREQUENCY PACKAGED PHEMT
File Size	187.90K / 3 Page	View it Online	Download Datasheet

				Filtronic Compound Semiconductors
Part No.	FPD7612
OCR Text	... 48 The FPD7612 is an AlGaAs/ingaas pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 200 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate struc...
Description	GENERAL PURPOSE PHEMT
File Size	187.75K / 2 Page	View it Online	Download Datasheet

				http:// HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	HFBR-5803 HFBR-5803T HFBR-5803A HFBR-5803AT
OCR Text	...03 and HFBR-5805 series utilize ingaas PIN photodiodes coupled to a custom silicon transimpedance preamplifier IC. These are packaged in the optical subassembly portion of the receiver. These PIN/preamplifier combinations are coupled to a c...
Description	FDDI 100 Mb/s ATM and Fast Ethernet Transceivers in Low Cost 1 x 9 Package Style HFBR-5803 · 100/125 Mbit/s MMF (2 km) 1x9 SC Duplex Transceiver for Fast Ethernet (100Base-FX) /ATM/FDDI HFBR-5803T · 100/125 Mbit/s MMF (2 km) 1x9 ST Duplex Transceiver for Fast Ethernet (100Base-FX) /ATM/FDDI HFBR-5803A · 125Mb/s Multi Mode Optical Transceivers with SC connector, -10C to 85C HFBR-5803AT · 125Mb/s Multi Mode Optical Transceivers with ST connector, -10C to 85C
File Size	238.77K / 16 Page	View it Online	Download Datasheet

				Perkin Elmer Optoelectronics
Part No.	C30617 C30637 C30616
OCR Text	ingaas PIN Photodiodes High-Speed ingaas PIN C30616, C30637, C30617, C30618 ingaas PIN Photodiodes Description These high-speed ingaas photodiodes are designed for use in O E M f i b e r- o p t i c c o m m u n i c a t i o n s systems...
Description	(C306xx) High Speed ingaas PIN
File Size	642.20K / 7 Page	View it Online	Download Datasheet

				Filtronic Compound Semi... FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LP7612P70
OCR Text	...Indium Gallium Arsenide (AlGaAs/ingaas) pseudomorphic High Electron Mobility Transistor (pHEMT), utilizing an Electron-Beam direct-write 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasi...
Description	PACKAGED HIGH DYNAMIC RANGE PHEMT
File Size	60.15K / 3 Page	View it Online	Download Datasheet

				Filtronic Compound Semi... FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LP7612
OCR Text	...Indium Gallium Arsenide (AlGaAs/ingaas) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-s...
Description	HIGH DYNAMIC RANGE PHEMT
File Size	38.11K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF4319 MGF4319G 431XG MGF4316 MGF4316G MGF431XG MGF431XGSERIES
OCR Text	ingaas HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a...
Description	Super Low Noise ingaas HEMT From old datasheet system
File Size	32.55K / 3 Page	View it Online	Download Datasheet

For ingaas Found Datasheets File :: 2165 Search Time::2.5ms
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