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  isotop Datasheet PDF File

For isotop Found Datasheets File :: 876    Search Time::1.391ms    
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    APT10025JVFR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT10025JVFR
OCR Text ...h optimized gate layout. SO isotop (R) 2 T- 27 "UL Recognized" * Fast Recovery Body Diode * Lower Leakage * Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Volt...
Description Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 34A 0.250 Ohm

File Size 73.43K  /  4 Page

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    APT10025JVR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT10025JVR
OCR Text ...h optimized gate layout. SO isotop (R) 2 T- 27 "UL Recognized" * Faster Switching * Lower Leakage * 100% Avalanche Tested * Popular SOT-227 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG T...
Description Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 34A 0.250 Ohm

File Size 71.02K  /  4 Page

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    ST Microelectronics
Part No. STPS120L15TV
OCR Text ...c power converters. packaged in isotop tm , this device is especially intended for use as an or-ing diode in fault toler- ant power supply equipments. description isotop tm k2 a2 a1 k1 symbol parameter value unit v rrm repetitive peak rever...
Description LOW DROP OR-ING POWER SCHOTTKY DIODE

File Size 146.60K  /  4 Page

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    Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT30M19JV APT30M19JVFR
OCR Text ...h optimized gate layout. SO isotop(R) 2 T- 27 * Fast Recovery Body Diode * Lower Leakage * Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage * 100% Avalan...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
POWER MOS V 300V 130A 0.019 Ohm

File Size 76.32K  /  4 Page

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    APT21M100J09

Microsemi Corporation
Part No. APT21M100J09
OCR Text isotop ? file # e145592 "ul recognized" g s s d n-channel mosfet absolute maximum ratings thermal and mechanical characteristics g d s single die mosfet unit a v mj a unit w c/w c v oz g inlbf nm ratings 21 13 120 30 ...
Description N-Channel MOSFET

File Size 99.37K  /  4 Page

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    APT2X100DQ60J

Advanced Power Technology
Part No. APT2X100DQ60J
OCR Text ...r = 600v, t j = 125c dual die isotop ? package maximum ratings all ratings: t c = 25c unless otherwise speci?ed. characteristic / test conditions maximum ...
Description (APT2x100DQ60J / APT2x101DQ60J) ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

File Size 184.06K  /  4 Page

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    APT2X100DQ60J

Microsemi Corporation
Part No. APT2X100DQ60J
OCR Text ...r = 600v, t j = 125c dual die isotop ? package maximum ratings all ratings: t c = 25c unless otherwise speci? ed. ...
Description ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

File Size 121.38K  /  4 Page

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    APT2X100DQ120J

Advanced Power Technology
Part No. APT2X100DQ120J
OCR Text ... = 1200v, t j = 125c dual die isotop ? package maximum ratings all ratings: t c = 25c unless otherwise speci?ed. characteristic / test conditions maximum ...
Description (APT2x100DQ120J / APT2x101DQ120J) ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

File Size 170.03K  /  4 Page

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    ST Microelectronics
Part No. STPS160H100TV
OCR Text ...r power converters. packaged in isotop, this device is intended for use in medium voltage operation, and particu- larly, in high frequency circuitries where low switching losses and low noise are required. description isotop tm k2 k1 a2 a1 ...
Description HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

File Size 117.28K  /  4 Page

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    STTA9012TV1 STTA9012TV2

STMICROELECTRONICS[STMicroelectronics]
Part No. STTA9012TV1 STTA9012TV2
OCR Text ...1 STTA9012TV2 isotopTM isotop and TURBOSWITCH are trademarks of STMicroelectronics. November1999 - Ed: 6B 1/8 STTA9012TV1/2 THERMAL AND POWER DATA (per diode) Symbol Rth(j-c) Parameter Junction to case thermal resistance ...
Description TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

File Size 65.08K  /  8 Page

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