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  KBE00S009M-D4110 Datasheet PDF File

For KBE00S009M-D4110 Found Datasheets File :: 16+       Page :: | <1> | 2 |   

    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KBE00S009M-D411 KBE00S009M-D4110
Description 1Gb NAND x 2 256Mb Mobile SDRAM x 2
SPECIALTY MEMORY CIRCUIT, PBGA137

File Size 1,908.72K  /  86 Page

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HUA FENG CIRCUIT





    AOD4110

Alpha & Omega Semiconductors
Part No. AOD4110
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 113.40K  /  5 Page

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    CPD4110

Central Semiconductor Corp
Part No. CPD4110
Description Switching Diode High Current Switching Diode Chip

File Size 463.97K  /  2 Page

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    SAMSUNG[Samsung semiconductor]
Part No. KBE00S009M-D411 KBE00S009M
Description From old datasheet system
1Gb NAND x 2 256Mb Mobile SDRAM x 2

File Size 1,891.88K  /  86 Page

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    Samsung Electronic
Part No. KBE00S009M-D411
Description 1Gb NAND x 2 256Mb Mobile SDRAM x 2

File Size 1,899.39K  /  86 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. 3DD4110PL 3DD4110PL-O-T-N-C 3DD4110PL-O-M-N-C
Description MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 401.93K  /  6 Page

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Part No. UPD41102C-1S
Description Field/Frame/Line Memory

File Size 299.62K  /  13 Page

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Part No. UPD41101G-3
Description Field/Frame/Line Memory

File Size 299.33K  /  13 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KBE00G003M-D411 KBE00G003M-D4110
Description NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107

File Size 1,254.33K  /  89 Page

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    LD410860 LD411060 LD412460 LD4160 LD411260

POWEREX INC
POWEREX[Powerex Power Semiconductors]
Powerex Powers
Part No. LD410860 LD411060 LD412460 LD4160 LD411260
Description POW-R-BLOK Dual Diode Isolated Module (600 Amperes / Up to 2400 Volts)

File Size 99.58K  /  5 Page

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