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Motorola Mobility Holdings, Inc.
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Part No. |
mrf5p21180 mrf5p21180R6
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OCR Text |
mrf5p21180 motorola rf device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfet designed for w?cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multi... |
Description |
mrf5p21180 2170 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
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File Size |
401.00K /
8 Page |
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it Online |
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Motorola
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Part No. |
mrf5p21180
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OCR Text |
mrf5p21180/D
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistor
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be ... |
Description |
2170 MHz, 180 W AVG., 2 x W?CDMA, 28 V Lateral N?Channel RF Power MOSFET From old datasheet system
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File Size |
410.25K /
8 Page |
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it Online |
Download Datasheet
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MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
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Part No. |
mrf5p21180R6 mrf5p21180
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OCR Text |
mrf5p21180/D
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and ... |
Description |
N-Channel Enhancement-Mode Lateral MOSFET RF Power Field Effect Transistor
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File Size |
406.67K /
9 Page |
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it Online |
Download Datasheet
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Freescale (Motorola)
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Part No. |
mrf5p21180R6
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OCR Text |
...bserved. order this document by mrf5p21180/d motorola semiconductor technical data mrf5p21180r6 2170 mhz, 38 w avg., 2 x w - cdma, 28 v lateral n - channel rf power mosfet case 375d - 05, style 1 ni - 1230 ? motorola, inc. 2004 rev 4 ... |
Description |
2170 MHz, 38 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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File Size |
538.64K /
8 Page |
View
it Online |
Download Datasheet
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