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  mrf6s21100nbr1 Datasheet PDF File

For mrf6s21100nbr1 Found Datasheets File :: 4    Search Time::1.25ms    
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    MRF6S21100NBR1 MRF6S21100NR1 MRF6S21100NR108

Freescale Semiconductor, Inc
Part No. mrf6s21100nbr1 MRF6S21100NR1 MRF6S21100NR108
OCR Text mrf6s21100nbr1 1 rf device data freescale semiconductor rf power field effect transistors n-channel enhancement-mode lateral mosfets designed for w-cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 927.41K  /  20 Page

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    Freescale Semiconductors
Part No. mrf6s21100nbr1 MRF6S21100N
OCR Text ... 13 inch Reel. MRF6S21100NR1 mrf6s21100nbr1 2170 MHz, 23 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S21100NR1 CASE 1484 - 02, STYLE 1 TO - 272 WB - 4 PLASTI...
Description  Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz

File Size 510.14K  /  12 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF6S21100NR1 mrf6s21100nbr1
OCR Text ... 13 inch Reel. MRF6S21100NR1 mrf6s21100nbr1 2110 - 2170 MHz, 23 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S21100NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4...
Description RF Power Field Effect Transistors

File Size 852.71K  /  18 Page

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    MOTOROLA
Part No. MRF6S21100N
OCR Text ... 13 inch Reel. MRF6S21100NR1 mrf6s21100nbr1 2110 - 2170 MHz, 23 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S21100NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4...
Description mrf6s21100nbr1 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs

File Size 670.29K  /  16 Page

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