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  mtp4n80e Datasheet PDF File

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    MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E-D

ON Semiconductor
Motorola, Inc
Motorola Mobility Holdings, Inc.
Part No. mtp4n80e_D ON2614 ON2613 MTP4N80 mtp4n80e mtp4n80e-D
OCR Text mtp4n80e/D Designer'sTM Data Sheet TMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability with...
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RDSon）\u003d 3.0欧姆
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    Motorola
Part No. P4N80E
OCR Text ...e. rev 5 order this document by mtp4n80e/d semiconductor technical data ? motorola, inc. 1996 tmos power fet 4.0 amperes 800 volts r ds(on) = 3.0 ohm motorola preferred device ? d s g case 221a06, style 5 to220ab ...
Description Search --To mtp4n80e
File Size 168.69K  /  8 Page

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