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  p-mosfets Datasheet PDF File

For p-mosfets Found Datasheets File :: 14202    Search Time::1.016ms    
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    IRFPC60LC-P IRFPC60LC-PPBF

International Rectifier
Vishay Intertechnology, Inc.
Part No. IRFPC60LC-P IRFPC60LC-PPBF
OCR Text PD - 99438 HEXFET(R) Power MOSFET l l l l l l l IRFPC60LC-P D Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V...MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet...
Description 600V Single N-Channel HEXFET Power MOSFET in a TO-247SM package
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 16A I(D) | TO-247AC
16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC TO-247AC, 3 PIN

File Size 106.50K  /  8 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text PD - 91670 IRF1010E HEXFET(R) Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C...MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Ful...MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text PD - 91278 IRF1010N HEXFET(R) Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C...MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRHY597034CM IRHY593034CM

International Rectifier
Part No. IRHY597034CM IRHY593034CM
OCR Text ... dm pulsed drain current ? -72 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 ...mosfets for space appli- cations. these devices have been characterized for single event effects (s...
Description -60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package
-60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package

File Size 140.73K  /  8 Page

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    Linear Technology, Corp.
Part No. LT1336IS
OCR Text ...ture t a and power dissipation p d according to the following formulas: lt1336cn/lt1336in: t j = t a + (p d )(70 c/w) lt1336cs/lt1336is: t j = t a + (p d )(110 c/w) note 2: dynamic supply current is higher due to the gate charge be...
Description Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-SO 0 to 70 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO16

File Size 369.36K  /  16 Page

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    ST Microelectronics
Part No. L6205PD
OCR Text ...impedance output c boot 220nf c p 10nf r p 100 w d1 1n4148 d2 1n4148 d2 c boot d1 r p c p v s vs a vcp vboot vs b d01in1328 inputs outputs en in1 in2 out1 out2 l x x high z high z h l l gnd gnd h h l vs gnd hlhgndvs hhhvsvs 5v d01in1329 5v ...
Description DUAL DMOS FULL BRIDGE MOTOR DRIVER

File Size 351.27K  /  18 Page

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    FAN7093

Fairchild Semiconductor
Part No. FAN7093
OCR Text ... applications. it contains one p-channel high- side mosfet and one n-channel low-side mosfet with an integrated control ic in one package...mosfets. the is pin output represents current for e ither the p- chan or the n-chan depending on whi...
Description High Current PN Half Bridge Rectifier 47 A, Max path resistance 30.5 m at 150 °C

File Size 1,824.64K  /  19 Page

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    International Rectifier, Corp.
Part No. IRFZ34VPBF
OCR Text ... dm pulsed drain current 120 p d @t c = 25c power dissipation 70 w linear derating factor 0.46 w/c v gs gate-to-source voltage 20 v e...mosfets from international rectifier utilize advanced processing techniques to achieve extremely low...
Description HEXFET Power MOSFET HEXFET功率MOSFET

File Size 172.00K  /  8 Page

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    IRFR3411

International Rectifier
Part No. IRFR3411
OCR Text ... dm pulsed drain current 110 p d @t c = 25 c power dissipation 130 w linear derating factor 0.83 w/ c v gs gate-to-source voltage 2...mosfets irfr3411/irfu3411 8 www.irf.com d-pak (to-252aa) package outline dimensions are shown in...
Description 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package

File Size 111.48K  /  10 Page

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For p-mosfets Found Datasheets File :: 14202    Search Time::1.016ms    
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