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  pep Datasheet PDF File

For pep Found Datasheets File :: 1537    Search Time::1.125ms    
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    MRFE6VP6300HR311 MRFE6VP6300HSR3

Freescale Semiconductor, Inc
Freescale Semiconductor...
Part No. MRFE6VP6300HR311 MRFE6VP6300HSR3
OCR Text ...er p out , output power (watts) pep v dd =50vdc,i dq = 1600 ma, f1 = 230 mhz f2 = 230.1 mhz, two--tone measurements 3rd order -- 4 0 -- 5 0 -- 6 0 100 400 imd, intermodulatio n distortion (dbc) -- 7 0 5th order figure 11. intermodulation di...
Description RF Power Field Effect Transistors

File Size 989.78K  /  15 Page

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    MRF6S9125NR106 MRF6S9125NBR1

Freescale Semiconductor, Inc
Freescale Semiconductor...
Part No. MRF6S9125NR106 MRF6S9125NBR1
OCR Text ...ma p out , output power (watts) pep 20 18 10 g ps , power gain (db) 21 19 1187 ma 950 ma 1 300 v dd = 28 vdc, f1 = 880 mhz, f2 = 880.1 mhz two ?tone measurements figure 6. third order intermodulation distortion versus output power ?30 ?10 ...
Description RF Power Field Effect Transistors
   RF Power Field Effect Transistors

File Size 852.90K  /  20 Page

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    MRF19045LR308

Freescale Semiconductor, Inc
Part No. MRF19045LR308
OCR Text ...wer p out , output power (watts pep) figure 13. cw two-tone intermodulation distortion products versus output power p out , output power (watts pep) g ps , power gain (db) , drain efficiency (%), g ps , power gain (db) 0 5 10 15 20 25 30 ...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 378.96K  /  10 Page

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    MW6S004N MW6S004NT1

NXP Semiconductors
Part No. MW6S004N MW6S004NT1
OCR Text ... dq = 50 ma, p out = 4 watts pep power gain ? 18 db drain efficiency ? 33% imd ? - 34 dbc ? typical two - tone performance @ 900 mhz, 28 volts, i dq = 50 ma, p out = 4 watts pep power gain ? 19 db drain efficiency ? 33% imd ? - 39 d...
Description RF Power Field Effect Transistor

File Size 542.00K  /  13 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MW6S004NT107
OCR Text ... dq = 50 ma, p out = 4 watts pep power gain ? 18 db drain efficiency ? 33% imd ? - 34 dbc ? typical two - tone performance @ 900 mhz, 28 volts, i dq = 50 ma, p out = 4 watts pep power gain ? 19 db drain efficiency ? 33% imd ? - 39 d...
Description RF Power Field Effect Transistor

File Size 494.39K  /  13 Page

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    PTB20017

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20017
OCR Text ... it may be used for both CW and pep applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 150 Watts, 860-900 MHz Cla...
Description 150 Watts, 86000 MHz Cellular Radio RF Power Transistor
150 Watts, 860-900 MHz Cellular Radio RF Power Transistor
150 Watts 860-900 MHz Cellular Radio RF Power Transistor

File Size 44.06K  /  3 Page

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    MRF422 MRF422-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
Part No. MRF422 MRF422-15
OCR Text pep), 30mhz, 28v m/a-com products released - rev. 07.07 mrf422 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44....
Description The RF Line NPN Silicon Power Transistor 150W(pep), 30MHz, 28V

File Size 227.44K  /  6 Page

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    飞思卡尔半导体(中国)有限公司
Part No. 100B4R7CP500X 100B100JCA500X MW4IC001NR4 CRCW120620R0F100 -27271SL
OCR Text ... = 12 ma output power ? 900 mw pep power gain ? 13 db efficiency ? 38% ? high gain, high efficiency and high linearity ? designed for maximum gain and insertion phase flatness ? excellent thermal stability ? characterized with series equiv...
Description RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大

File Size 592.85K  /  16 Page

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    MRF377HR3 MRF377HR309

Freescale Semiconductor, Inc
Part No. MRF377HR3 MRF377HR309
OCR Text ...ps p out , output power (watts) pep figure 2. two - tone power gain versus output power g ps , power gain (db) v dd = 32 vdc i dq = 2000 ma f1 = 859.95 mhz, f2 = 860.05 mhz 18.5 18 17.5 17 16.5 100 ?70 ?20 10 i dq = 1400 ma p out , outp...
Description RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 779.39K  /  14 Page

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    PTF140451E PTF140451F

Infineon Technologies AG
Part No. PTF140451E PTF140451F
OCR Text ..., i dq = 550 ma, p out = 45 w pep , ? = 1500 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 17 18 ? db drain efficiency h d 35 36.5 ? % intermodulation distortion imd ? ?32 ?30 dbc dc characteristics characte...
Description Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 - 1550 MHz

File Size 98.51K  /  9 Page

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For pep Found Datasheets File :: 1537    Search Time::1.125ms    
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