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NXP Semiconductors N.V.
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| Part No. |
BLF574
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| OCR Text |
...r; typical values 001aaj127 p l(pep) (w) 0 600 400 200 26 24 28 30 g p (db) 22 40 20 60 80 0 h d (%) g p h d p l (w) 0 500 400 200 300 100 001aaj128 26 24 28 30 g p (db) 22 (7) (6) (5) (4) (3) (2) (1)
blf574_2 ? nxp b.v. 2009. all right... |
| Description |
HF - VHF power LDMOS transistor BLF574<SOT539A (LDMOST)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
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| File Size |
163.99K /
18 Page |
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Motorola
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| Part No. |
MRF21085
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| OCR Text |
... (v dd = 28 vdc, p out = 90 w pep, i dq = 1000 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) g ps 13.6 db twoCtone drain efficiency (v dd = 28 vdc, p out = 90 w pep, i dq = 1000 ma, f1 = 2110 mhz, f2 = 2120 mhz ... |
| Description |
MRF21085, MRF21085R3, MRF21085SR3, MRF21085LSR3 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs
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| File Size |
363.12K /
12 Page |
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it Online |
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Motorola
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| Part No. |
MRF21045
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| OCR Text |
... (v dd = 28 vdc, p out = 45 w pep, i dq = 500 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) g ps 14.9 db twoCtone drain efficiency (v dd = 28 vdc, p out = 45 w pep, i dq = 500 ma, f1 = 2110 mhz, f2 = 2120 mhz an... |
| Description |
MRF21045R3, MRF21045LR3, MRF21045SR3, MRF21045LSR3 2170 MHz, 45 W, 28 V Lateral N-Channel RF Power MOSFETs
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| File Size |
307.70K /
12 Page |
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it Online |
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Motorola Mobility Holdings, Inc.
MOTOROLA INC
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| Part No. |
MRF20060RS
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| OCR Text |
... volts output power e 60 watts (pep) power gain e 9 db efficiency e 33% intermodulation distortion e 30 dbc ? characterized with series equivalent largesignal impedance parameters ? sparameter characterization at high bias levels ? excellen... |
| Description |
NPN Silicon RF Power Transistor(NPN硅射频功率晶体管) L BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(NPN纭??棰?????浣??)
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| File Size |
98.44K /
12 Page |
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it Online |
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Motorola
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| Part No. |
MRF21060
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| OCR Text |
... (v dd = 28 vdc, p out = 60 w pep, i dq = 500 ma, f = 2110 mhz and 2170 mhz, tone spacing = 100 khz) g ps 11 12.5 db twoCtone drain efficiency (v dd = 28 vdc, p out = 60 w pep, i dq = 500 ma, f = 2110 mhz and 2170 mhz, tone spacing =... |
| Description |
MRF21060, MRF21060R3, MRF21060SR3 2170 MHz, 60 W, 28 V Lateral N-Channel RF Power MOSFETs
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| File Size |
290.98K /
8 Page |
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it Online |
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Freescale Semiconductor, Inc
FREESCALE SEMICONDUCTOR INC
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| Part No. |
MRF6P23190H08 MRF6P23190HR6
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| OCR Text |
...ma p out , output power (watts) pep 500 g ps , power gain (db) 15 14 12 950 ma 13 100 v dd = 28 vdc, f1 = 2345 mhz, f2 = 2355 mhz two?tone measurements, 10 mhz tone spacing 11 figure 6. third order intermodulation distortion versus outpu... |
| Description |
RF Power Field Effect Transistor
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
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| File Size |
428.21K /
11 Page |
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it Online |
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