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SGS Thomson Microelectronics
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| Part No. |
AN1012
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| OCR Text |
predicting the Battery Life and Data Retention Period of NVRAMs
INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their dis... |
| Description |
predicting THE BATTERY LIFE AND DATA RETENTION PERIOD OF NVRAMS
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| File Size |
178.54K /
28 Page |
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MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
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| Part No. |
MPF4392 MPF4393 ON2307
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| OCR Text |
..., this charge flow is reversed. predicting turn-on time is somewhat difficult as the channel resistance rds is a function of the gate-source voltage. While Cgs discharges, VGS approaches zero and rds decreases. Since Cgd discharges through ... |
| Description |
(MPF4392) JFETs Switching
From old datasheet system
N-hannel Depletion
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| File Size |
117.95K /
6 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MMBF4391LT1 MMBF4391LT1G MMBF4392L MMBF4393LT1G MMBF4393LT1 MMBF4392LT1
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| OCR Text |
..., this charge flow is reversed. predicting turn-on time is somewhat difficult as the channel resistance rDS is a function of the gate-source voltage. While Cgs discharges, VGS approaches zero and rDS decreases. Since Cgd discharges through ... |
| Description |
Small Signal JFET
JFET Switching Transistors 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
JFET Switching Transistors 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
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| File Size |
90.99K /
6 Page |
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it Online |
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