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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
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| Part No. |
PMD18D80 PMD19D PM019D80
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| OCR Text |
... madc; t, = 25c lce = 100 madc; rbe = 2.2m1 veb = 5 vdc; lc = oa vce = 54 vdc; rbe = 2.2kn vce = 67 vdc; rbe = 2.2ko 80 100 80 100 6.0 15.0 15.0 vdc vdc. madc madc dynamic characteristics output capacitance imall signal current gain tommon ... |
| Description |
300 WATT (50 AMP CONTINUOUS, 100 AMP PEAK
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| File Size |
83.30K /
2 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
MCT210 MCT2E-M MCT2-M
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| OCR Text |
...CT2202 MCT271
Fig. 7 CTR vs. rbe (Unsaturated) (Black Package)
1.0 1.0
Fig. 8 CTR vs. rbe (Unsaturated) (White Package)
NORMALIZED CTR ( CTRrbe / CTRrbe(OPEN))
0.9 0.8 IF = 10 mA 0.7 IF = 5 mA 0.6 0.5 0.4 0.3 0.2 VCE= 5.0 V 0.1 0.0... |
| Description |
PHOTOTRANSISTOR OPTOCOUPLERS
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| File Size |
250.54K /
13 Page |
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it Online |
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New Jersey Semi-Conductor Products, Inc.
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| Part No. |
BRY39
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| OCR Text |
...er current pnp npn open emitter rbe = 10ka open base open collector note 1 note 2 tp= 10 us; 5 = 0.01 - - - - - - - - -70 70 70 -70 -70 5 175 175 175 -175 2.5 -2.5 v v v v v v v v ma ma ma ma a a programmable unijunction transistor vga ia g... |
| Description |
Programmable unijunction transistor
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| File Size |
141.36K /
4 Page |
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it Online |
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Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
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| Part No. |
2SD2263
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| OCR Text |
... I C = 10 A, IE = 0 I C = 1 mA, rbe = I C = 0.5 A, rbe = , L = 20 mH I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, rbe = VEB = 5 V, IC = 0 VCE = 2 V, IC = 50 mA*1 VCE = 2 V, IC = 0.5 A*1 I C = 0.5 A*1, I B = 50 mA I E = 0.5 A*1
Col... |
| Description |
Silicon NPN Epitaxial
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| File Size |
32.96K /
7 Page |
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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
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| Part No. |
MJ3000 MJ2501 MJ2500 MJ3001
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| OCR Text |
... leakage current (veb = 60 vdc, rbe = 1 .0 k ohm) mj2500, mj3000 (veb = 80 vdc, rbe = 1 .0 k ohm) m j2501 , mj3001 (veb = 60 vdc. rbe = 1 .0 k ohm, tc = 1 50c) mj2500, mj3000 (veb = 80 vdc, rbe = 1.0k ohm, tc = 150c) mj2501, mj3001 emitter ... |
| Description |
Medium-Power Complementary Silicon Transistors
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| File Size |
83.96K /
2 Page |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BF421 BF423 Q62702-F496 Q62702-F532
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| OCR Text |
...ltage Collector-emitter voltage rbe = 2.7 k Collector-base voltage Emitter-base voltage Collector current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC... |
| Description |
PNP Silicon Transistors With High Reverse Voltage
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
From old datasheet system
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| File Size |
124.11K /
4 Page |
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Price and Availability
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