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    22SC5405 2SC5405

PANASONIC[Panasonic Semiconductor]
PanasonicSemiconductor
Panasonic Corporation
Part No. 22SC5405 2SC5405
OCR Text ...mplification ratio Unit: mm s Features q q 9.90.3 3.00.5 4.60.2 2.90.2 q High-speed switching High forward current transfer ratio hFE which has satisfactory linearity Dielectric breakdown voltage of the package: > 5kV (TC=...
Description    Silicon NPN triple diffusion planar type
SiliconNPNtriplediffusionplanartype

File Size 35.55K  /  2 Page

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    2764A M27C64A-30C1TR M27C64A-30C1X M27C64A-30C6TR M27C64A-30C6X M27C64A-30F1TR M27C64A-30F1X M27C64A-30F6TR M27C64A-30F6

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. 2764A M27C64A-30C1TR M27C64A-30C1X M27C64A-30C6TR M27C64A-30C6X M27C64A-30F1TR M27C64A-30F1X M27C64A-30F6TR M27C64A-30F6X M27C64A-20C1TR M27C64A-20C1X M27C64A-20C6TR M27C64A-20C6X M27C64A-25C1TR M27C64A-25F6X M27C64A-25F6TR M27C64A-15C6X M27C64A-15F1X M27C64A-15F6X M27C64A-15C1TR M27C64A-15F6TR M27C64A-15C6TR M27C64A-15F1TR M27C64A-20F1TR M27C64A-25F1X M27C64A-25F1TR M27C64A-25C1X M27C64A-25C6TR M27C64A-25C6X M27C64A-15C1X
OCR Text ...nature Identifier Manufacturer's Code Device Code A0 VIL VIH Q7 1 0 Q6 0 0 Q5 0 0 Q4 1 0 Q3 1 1 Q2 0 0 Q1 1 0 Q0 1 0 Hex Data 9Bh 08h 3/...P tPLPH G tQXGL tGHAX tGLQV tGHQZ DATA IN tPHQX DATA OUT VALID PROGRAM VERIFY AI00779 Figu...
Description 64K (8K x 8) UV EPROM and OTP ROM 64K的(8K的8)紫外线EPROM和检察官办公室光

File Size 97.89K  /  11 Page

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    2SA1083 2SA1084 2SA1085

HITACHI[Hitachi Semiconductor]
Part No. 2SA1083 2SA1084 2SA1085
OCR Text ...censes of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third pa...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 40.84K  /  8 Page

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    2SA1193 2SA1193K

HITACHI[Hitachi Semiconductor]
Part No. 2SA1193 2SA1193K
OCR Text ...1.0 -1.0 -- -1.5 -2.0 -- -- V V s s I C = -250 mA I B1 = -IB2 = -0.5 mA Unit V A A Test conditions I C = -1 mA, RBE = VCB = -60 V, IE = 0 V...P =1 PW Ta = 25C 0.3 0 50 100 150 Ambient Temperature Ta (C) -10 -30 -100 -300 Collec...
Description Silicon PNP Epitaxial/ Darlington
Silicon PNP Epitaxial, Darlington

File Size 33.83K  /  6 Page

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    2SA1194 2SA1194K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1194 2SA1194K
OCR Text ...1.0 -1.0 -- -2.0 -2.0 -- -- V V s s I C = -500 mA I B1 = -IB2 = -1 mA Unit V A A Test conditions I C = -1 mA, RBE = VCB = -60 V, IE = 0 VEB...P c= .0 -0.8 8W -1 .6 TC = 25C -0 4 -0. DC Current Transfer Ratio vs. Collector Current 100,000 DC c...
Description Silicon PNP Epitaxial

File Size 34.49K  /  5 Page

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    2SA2027

Isahaya Electronics Corporation
ETC[ETC]
List of Unclassifed Manufacturers
Part No. 2SA2027
OCR Text ...65 '**eOES`*Zs'Av--t' 6-41 A`S*YOEvESO*eSe *E*3/4ZI*iZ*A*M--S*IOEu*aE"wAeU**A"1/4"`I**iIOEI*a"-*1/2e*AOEe"(R)*i*e*e* eU**B*3/4Z**i IOEI*a...p"rE1/2"K*OECTn"dZq**i*w"u1/23/4-1/2IZQ*lZ`--A e*A-{Z`--'EL*UI Z*p*i*nEAACTn"dZq*S--L*e'm"I*aZYOE I`...
Description SILICON EPITAXIAL TRANSISTOR

File Size 54.89K  /  4 Page

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    2SA2057

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2057
OCR Text ....30 0.7 0.15 120 40 - 0.5 V MHz s s s Min -60 -100 -100 -1 320 Typ Max Unit V A A mA Note) 1. Measuring methods are based on JAPANESE IN...P 160 to 320 SJD00284BED 1 2SA2057 PC Ta 35 (1) TC = Ta (2) Without heat sink -6 VCE = -4 ...
Description Silicon PNP epitaxial planar type

File Size 72.39K  /  3 Page

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    2SA2067

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2067
OCR Text ...0.3 0.7 0.15 120 40 - 0.8 V MHz s s s Min -60 -100 -100 -1 320 Typ Max Unit V A A mA Note) 1. Measuring methods are based on JAPANESE IN...P 160 to 320 Publication date: January 2003 SJD00286BED 1 2SA2067 IC VBE -7 VCE = -4 ...
Description Silicon PNP epitaxial planar type

File Size 66.39K  /  3 Page

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    2SA673A 2SA673AK 2SA673A_K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA673A 2SA673AK 2SA673A_K
OCR Text ... -0.6 -- 320 -- -- -- -- -- MHz s s s Unit V V V A A V V V Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB =...P.G. tr 5 ns PW 5 s duty ratio 2% CRT Switching Time Test Circuit tstg Test Circuit D.U.T. 1.0 21...
Description Silicon PNP Epitaxial

File Size 35.43K  /  8 Page

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    2SA778 2SA778A 2SA778AK 2SA778K 2SA778_K 2SA778A_K

HITACHI[Hitachi Semiconductor]
Part No. 2SA778 2SA778A 2SA778AK 2SA778K 2SA778_K 2SA778A_K
OCR Text ...1.0 -1.0 200 -1.0 V V pF MHz ns s s Unit V V A A A Test conditions I C = -50 A, IE = 0 I C = -50 A, RBE = 30 k VCB = -100 V, IE = 0 VCB = -1...P.G. tr, tf 5ns PW 5s duty ratio = 50% tstg Test Circuit 510 D.U.T 0.1 2.4 k 50 - -3 V 50 ++ 50...
Description Silicon PNP Epitaxial

File Size 41.66K  /  8 Page

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