| |
|
 |
SPT Signal Processing Technologies
Fairchild Semiconductor, Corp.
|
| Part No. |
SPT9101SIC
|
| Description |
125 MSPS SAMPLE-AND-HOLD AMPLIFIER SAMPLE AND HOLD AMPLIFIER, 0.011 us ACQUISITION TIME, CQCC20
|
| File Size |
71.22K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Toshiba Electronic Devices & Storage Corporation |
| Part No. |
MG800FXF1ZMS3
|
| Description |
N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Toshiba Electronic Devices & Storage Corporation |
| Part No. |
MG800FXF1JMS3
|
| Description |
N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TRS8E65H
|
| Description |
SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TRS10E65H
|
| Description |
SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TRS6E65H
|
| Description |
SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TRS3E65H
|
| Description |
SiC Schottky Barrier Diode (SBD), 650 V, 3 A, TO-220-2L
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TRS12V65H
|
| Description |
SiC Schottky Barrier Diode (SBD), 650 V, 12 A, DFN8×8
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TRS4E65H
|
| Description |
SiC Schottky Barrier Diode (SBD), 650 V, 4 A, TO-220-2L
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TRS2E65H
|
| Description |
SiC Schottky Barrier Diode (SBD), 650 V, 2 A, TO-220-2L
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TRS10V65H
|
| Description |
SiC Schottky Barrier Diode (SBD), 650 V,104 A, DFN8×8
|
| Tech specs |
|
|
|
Official Product Page
|
|
Bom2Buy.com
Price and Availability
|
|
|
JITONG
TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor |
| Part: SIC0576Y |
| Maker: PMX |
| Pack: MQFP |
| Stock: 86 |
| Unit price
for : |
|
50: $5.26 |
|
100: $5.00 |
| 1000:
$4.74 |
|
Email: oulindz@gmail.com |
|
Contact us |
|
|
