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				List of Unclassifed Man... Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
Part No.	PA21A PA21 PA26 PA25 PA25A
OCR Text	...rid integrated circuit utilizes thick film (cermet) resistors, ceramic capacitors and semiconductor chips to maximize reliability, minimize size and give top performance. Ultrasonically bonded aluminum wires provide reliable interconnection...
Description	POWER DUAL OPERATIONAL AMPLIFIERS POWER DUAL OPERATIONAL AMPLIFIERS 功耗双运算放大
File Size	83.30K / 5 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	Q67060-S7411-A803 BTS6143D
OCR Text	...B FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Infineon Technologies AG 3 of 16 2003-Oct-01 Data sheet BTS 6143 D Parameter and Conditions at Tj= 25, Vbb = 12 V unless...
Description	Smart High Side Switches - 10mOhm - Vbb(on) = 5,5V-38V - P-TO252-5 High Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-TSSOP -55 to 125 Smart Highside Power Switch 智能阻抗高侧电源开
File Size	259.19K / 16 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	TEA2025B TEA2025D TEA2025 TEA-2025
OCR Text	...lass-epoxy substrate with a 35m thick copper surface of 5 cm2. 2/9 TEA2025B - TEA2025D ELECTRICAL CHARACTERISTICS (Tamb = 25C, VCC = 9V, Stereo unless otherwise specified) Symbol VS IQ VO AV AV Rj PO Parameter Supply Voltage Quiesce...
Description	STEREO AUDIO AMPLIFIER 立体声音频放大器
File Size	80.89K / 9 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BSP170P Q67041-S4018
OCR Text	... FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 07 / 1998 BSP 170 P Preliminary data Electrical Characteristics Parameter at Tj = 25 C, unless otherwise ...
Description	SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated) 1.9 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET High Speed CMOS 8-Channel Analog Multiplexer/Demultiplexer 16-SOIC -55 to 125 SIPMOS ? Power Transistor From old datasheet system
File Size	151.13K / 9 Page	View it Online	Download Datasheet

				Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	BTS409L1 BTS409-L1 BTS409-L1E3043 BTS409-L1E3062A BTS409L1E3043
OCR Text	...B FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 2 BTS409L1 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwis...
Description	Smart High Side Power Switch Smart High Side Switches - 5-34V, 200m?2,3A TO 220 Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) From old datasheet system Transient Voltage Suppressor Diodes Smart Power High-Side-Switch(智能化电源高边开 9.5 A BUF OR INV BASED PRPHL DRVR, PSFM5 Connector Dust Cap; For Use With:USB TV Harsh Environment Square Flange Receptacles; Body Material:Metal; Body Plating:Nickel 智能阻抗高侧电源开关（过载保护电流限制，短路保护过热关机）
File Size	159.59K / 12 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BTS425L1
OCR Text	...B FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 2 BTS 425 L1 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherw...
Description	Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) From old datasheet system
File Size	150.81K / 12 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] SIEMENS AG Infineon Technologies AG
Part No.	BUZ104SL-4
OCR Text	...B FR4 with 6 cm2 (one layer,70m thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Charact...
Description	Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
File Size	89.18K / 8 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BY228
OCR Text	...s printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.4. For more information please refer to the "General Part of associated Handbook". 1996 Sep 26 3 Philips Semiconductors Product specification Damper d...
Description	Damper diode
File Size	43.27K / 7 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BY448
OCR Text	...s printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.4. For more information please refer to the "General Part of associated Handbook". 1996 Sep 26 3 Philips Semiconductors Product specification Damper d...
Description	Damper diode
File Size	43.16K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BYD1100 BYD1100_2
OCR Text	...s printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.12. For more information please refer to the `General Part of associated Handbook'. PARAMETER thermal resistance from junction to tie-point thermal resistance from j...
Description	From old datasheet system Hyper fast soft-recovery rectifier
File Size	62.68K / 12 Page	View it Online	Download Datasheet

For thick Found Datasheets File :: 13798 Search Time::1.172ms
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