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JILIN SINO-MICROELECTRO...
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| Part No. |
HBR4060HFR
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| OCR Text |
...w eight hbr4060 z hbr4060 to - 220 no tube 1.98 g(typ) hbr4060 zr hbr4060 to - 220 yes tube 1.98 g(t...3pb no tube 5.20 g(typ) hbr4060 abr hbr4060 to - 3pb yes tube 5.20... |
| Description |
High frequency switch power supply
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| File Size |
311.53K /
8 Page |
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it Online |
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JILIN SINO-MICROELECTRO...
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| Part No. |
2SB688B-O-W-N-B
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| OCR Text |
... - n - b 2sb688 no to - 247 tube 6.00g(typ) 2sb688 - o - ab - n - b 2sb688 no to - 3pb tube 5.10g(typ) 2sb688 a - o - w - n - b 2sb688 no to - 247 tube 6.00g(typ) 2... |
| Description |
Power Amplifier Applications
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| File Size |
343.51K /
5 Page |
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it Online |
Download Datasheet |
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Thinki Semiconductor Co...
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| Part No. |
NJW0281G
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| OCR Text |
to-3pb package ? complement to type njw0302g applications ? power amplifier applications ? recommended for 100w high fidelity audio frequency amplifier output stage fig.1 simplified outline (to-3pb) and symbol pb free pl... |
| Description |
150 Watt Silicon Epitaxial Planar NPN Power Transistor
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| File Size |
1,434.78K /
4 Page |
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it Online |
Download Datasheet |
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JILIN SINO-MICROELECTRONICS CO., LTD.
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| Part No. |
SBL3040SHF SBL3040SABR SBL3040SZ SBL3040SZR
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| OCR Text |
...0 0.55V @Tj=125
Package
TO-22O
TO-22OHF
APPLICATIONS
High frequency switch power supply Free wheeling diodes, polarity protection applications to-3pb
RoHS
FEATURES
Common cathode structure Low power loss... |
| Description |
SCHOTTKY BARRIER DIODE
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| File Size |
381.52K /
7 Page |
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it Online |
Download Datasheet |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
K2611B
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| OCR Text |
...gy has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in...3pb 3pb 3pb 3pb package package package package dimension dimension dimension dimension unit:mm
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| Description |
Silicon N-Channel MOSFET
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| File Size |
1,004.76K /
7 Page |
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it Online |
Download Datasheet |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
K2611SB
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| OCR Text |
...gy has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in...3pb 3pb 3pb 3pb package package package package dimension dimension dimension dimension 0 unit:mm
... |
| Description |
Silicon N-Channel MOSFET
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| File Size |
699.76K /
7 Page |
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it Online |
Download Datasheet |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
K2698B
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| OCR Text |
...gy has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .this devices is specially wel...3pb 3pb 3pb 3pb package package package package dimension dimension dimension dimension unit:mm
... |
| Description |
Silicon N-Channel MOSFET
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| File Size |
1,095.50K /
7 Page |
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it Online |
Download Datasheet |
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Thinki Semiconductor Co...
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| Part No. |
NJW0302G
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| OCR Text |
to-3pb package ? complement to type njw0281g applications ? power amplifier applications ? recommended for 100w high fidelity audio frequency amplifier output stage pinning pin description 1 emitter 2 collector;connect... |
| Description |
150 Watt Silicon Epitaxial Planar PNP Power Transistor
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| File Size |
1,433.95K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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