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				TOSHIBA
Part No.	TPCP8207
OCR Text	...l gate charge : q sw = 4.7 nc (typ.) (3) low drain-source on-resistance: r ds(on) = 29.1 m ? (typ.) (v gs = 10 v) (4) low leakage current: i dss = 10 a (max) (v ds = 40 v) (5) enhancement mode: v th = 2 to 3 v (v ds = 10 v, i d =...
Description	Power MOSFET (N-ch dual)
File Size	239.03K / 9 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SB1072 2SB1072L 2SB1072S
OCR Text	...llector 2, 4 1 ID 3 k (Typ) 0.4 k (Typ) 3 S Type 3 L Type 2SB1072(L), 2SB1072(S) Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector curren...
Description	Silicon PNP Triple Diffused 三重扩散硅进步党
File Size	34.72K / 6 Page	View it Online	Download Datasheet


Part No.	C488T541
OCR Text	...cteristics parameter symbol min typ max unit dc power supply voltage v cc 4.75 5.0 5.25 v dc power supply current i cc 350 500 ma dc negative supply voltage v ee C5.46 C5.2 C4.94 v dc negative supply current i cc 250 m...
Description	TRANSMITTER, DFO
File Size	199.62K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB1079
OCR Text	...tor (Flange) 3. Emitter 1 k (Typ) 400 (Typ) 3 1 2 3 2SB1079 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak curren...
Description	Silicon PNP Triple Diffused
File Size	35.32K / 6 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	VND7N04-E
OCR Text	... parameter test conditions min. typ. max. unit v clamp drain-source clamp voltage i d = 200 ma v in = 0 32 42 52 v v clth drain-source clamp threshold voltage i d = 2 ma v in = 0 31 v v incl input-source reverse clamp voltage i in = -1...
Description	Fully autoprotected power MOSFET
File Size	585.98K / 18 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB1103
OCR Text	...r (Flange) 3. Emitter ID 4.0 k (Typ) 200 (Typ) 3 1 23 2SB1103 Absolute Maximum Ratings (Ta = 25C) Item Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Co...
Description	Silicon PNP Darlington Transistor Silicon PNP Triple Diffused
File Size	35.86K / 7 Page	View it Online	Download Datasheet

				MicroPower Direct, LLC
Part No.	LF205RW LF211RW LF200RW-14 LF201RW
OCR Text	...input parameter conditions min. typ. max. units input start voltage 5 vdc input 3.5 4.0 4.5 vdc 12 vdc input 4.5 7.0 9.0 24 vdc input 8.0 12.0 18.0 48 vdc input 16.0 24.0 36.0 input filter ? (pi) filter reverse polarity input current 1.0 a...
Description	LF200RW SERIES
File Size	266.57K / 2 Page	View it Online	Download Datasheet

				Vishay
Part No.	BZX384B5V1 BZX384B43 BZX384B4V3 BZX384B47 BZX384B4V7 BZX384B16
OCR Text	... ? 10 -4 /c min. nom. max. max. typ. typ. min. max. bzx384c2v4 w1 2.2 2.4 2.6 5 1 50 1 70 ( ? 100) 275 - 9 - 4 bzx384c2v7 w2 2.5 2.7 2.9 5 1 20 1 75 ( ? 100) 300 ( ? 600) - 9 - 4 bzx384c3v0 w3 2.8 3.0 3.2 5 1 10 1 80 ( ? 95) 325 ( ? ...
Description	Small Signal Zener Diodes
File Size	131.78K / 8 Page	View it Online	Download Datasheet

				Dynex Semiconductor
Part No.	DIM1200ASM45-TL000 DIM1200ASM45-TL000-15
OCR Text	... 45 00v v ce(sat) * (typ) 2.3 v i c (max) 1200 a i c(pk) (max) 2400 a * measured at the auxiliary terminals fig. 1 circuit configuration outline ty pe code: a (see fig. 11 for ...
Description	Single Switch IGBT Module
File Size	359.29K / 8 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPHR9003NL
OCR Text	...all gate charge: q sw = 16 nc (typ.) (3) low drain-source on-resistance: r ds(on) = 1.1 m ? (typ.) (v gs = 4.5 v) (4) low leakage current: i dss = 10 a (max) (v ds = 30 v) (5) enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i ...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	229.59K / 9 Page	View it Online	Download Datasheet

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