| PART |
Description |
Maker |
| K1S3216BCC |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
SAMSUNG Electronics
|
| K1S16161CA-I K1S16161CA DSK1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23V32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M5M44400BJ M5M44400BL M5M44400BRT-5 M5M44400BRT-5S |
FAST PAGE MODE 4194304-BIT(1048576-WORD BY 4-BIT)DYNAMIC RAM
(BJ/L/TP/RT) Fast Page Mode 4MBit DRAM
|
Mitsubishi Electric Semiconductor
|
| M5M44400AWJ M5M44400ATP M5M44400ART M5M44400AL M5M |
FAST PAGE MODE 4194304 BIT DYNAMIC RAM 快速页面模194304位动态随机存储器
From old datasheet system
(J/L/TP/RT) Fast Page Mode 4MBit DRAM
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HYE18P32161AC HYE18P32161ACL70 HYE18P32161ACL85 HY |
Specialty DRAMs - 2Mx16, VGBGA-48; Available 2Q04
32M Asynchronous/Page CellularRAM
|
INFINEON[Infineon Technologies AG]
|
| MSM51V16160D MSM51V16160DSL |
DRAM / FAST PAGE MODE TYPE
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI[OKI electronic componets]
OKI electronic components
|
| MSM51V17400D MSM51V17400DSL |
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DRAM / FAST PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| UPD23C128040BL UPD23C128040BLGX UPD23C128040BLGX-X |
128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC
|
| AM29PL320DB60R AM29PL320DT90 AM29PL320DB70 AM29PL3 |
32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory 1M X 32 FLASH 3V PROM, 60 ns, PBGA84
32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory 32兆位米16 1个M × 32位）的CMOS 3.0伏，不仅具备高性能页面模式闪存
|
Spansion, Inc.
Spansion Inc.
Advanced Micro Devices
|
