| PART |
Description |
Maker |
| MRF6S21100N |
MRF6S21100NBR1 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
|
MOTOROLA
|
| MAMXES0050 |
E-Series Surface Mount Mixer 2110 - 2170 MHz
|
MACOM[Tyco Electronics]
|
| SM2122-52LD |
2110-2170 MHz 160 Watt Peak Power Amplifier
|
Stealth Microwave, Inc.
|
| PTF102003 |
120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET
|
PEAK electronics GmbH
|
| PTFA210301E |
Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| PTAC210802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ?2170 MHz
|
Infineon Technologies A...
|
| MAPLST2122-030CF |
LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| PTFA210601E PTFA210601F |
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
| PTFA211801E PTFA211801F |
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| MAPLST2122-015CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V
|
Tyco Electronics
|
| PXFC211507SCV1R250XTMA1 |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ?2170 MHz
|
Infineon Technologies A...
|
