| PART |
Description |
Maker |
| CGY2010G-T |
880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP SEMICONDUCTORS
|
| LMSP54AA-097 |
RF Diode Switches 880 MHz - 915 MHz RF/MICROWAVE DIVERSITY SWITCH, 1.2 dB INSERTION LOSS
|
Murata Manufacturing Co., Ltd.
|
| MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3 |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MRF5S19100L MRF5S19100LR3 MRF5S19100LSR3 |
MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
1990 MHz, 22 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| RF3198SB RF3198PCBA-41X RF3198 |
880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
DUAL-BAND GSM900/DCS POWER AMP MODULE
|
RF MICRO DEVICES INC
|
| MRF6P27160H_06 MRF6P27160H MRF6P27160HR6_06 MRF6P2 |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
2700 MHz, 35 W AVG., 28 V Single N??DMA Lateral N??hannel RF Power MOSFET
|
FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
|
| RF5110G |
3V GSM POWER AMPLIFIER 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
RF Micro Devices, Inc.
|
| MAMXES0071 |
LJT 22C 22#22D SKT RECP E系列表面贴装混合80 - 915兆赫
E-Series Surface Mount Mixer 880 - 915 MHz
|
MACOM[Tyco Electronics]
|
| MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| MRF6P23190HR6 |
2400 MHz, 40 W Avg., 28 V, 2 x W鈥揅DMA Lateral N鈥揅hannel RF Power MOSFET
|
MOTOROLA
|
| MRF6S21100H MOTOROLAINC-MRF6S21100HSR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W?CDMA Lateral N?Channel RF Power MOSFET
|
Motorola
|
| MRF5P21240 |
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel Broadband RF Power MOSFET
|
Motorola
|
