| PART |
Description |
Maker |
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| LMSP54AA-097 |
RF Diode Switches 880 MHz - 915 MHz RF/MICROWAVE DIVERSITY SWITCH, 1.2 dB INSERTION LOSS
|
Murata Manufacturing Co., Ltd.
|
| SKY77542 |
Tx - Rx iPAC- FEM for Dual-Band GSM/GPRS (880 - 915 MHz), (1710 - 1785 MHz)
|
Skyworks Solutions Inc.
|
| MRF6S27085H MRF6S27085HR306 MRF6S27085HSR3 MRF6S27 |
RF Power Field Effect Transistors
MRF6S27085HSR3 2600-2700 MHz, 20 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs
|
FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
|
| MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3 |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| SFH7221 SFH7221-Z |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor
|
OSA Opto Light GmbH
OSRAM GmbH
|
| SKY77181 |
Power Amplifier Module for WCDMA / HSDPA (880-915 MHz)
|
Skyworks Solutions Inc.
|
| MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| ZL60212 ZL60212TBD ZL60212TDD ZL60212TGD |
880 nm High-Performance Single-chip DUPLEX SPECIALTY OPTOELECTRONIC DEVICE
|
3M Company
ZARLINK[Zarlink Semiconductor Inc]
|
| MAMXES0071 |
LJT 22C 22#22D SKT RECP E系列表面贴装混合80 - 915兆赫
E-Series Surface Mount Mixer 880 - 915 MHz
|
MACOM[Tyco Electronics]
|
| SM02932-58LD |
290-320 MHz 200 Watt Avg. Power Amplifier
|
Stealth Microwave, Inc.
|
