| PART |
Description |
Maker |
| KM23C32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C32005BG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AS6C3216 |
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
|
Alliance Memory
|
| K3N6C1000E-GCTCYC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| KM23C32101C |
32M-Bit (4Mx8) CMOS MASK ROM(32M(4Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM23C32000C |
32M-Bit (2Mx16) CMOS Mask ROM(32M浣?2Mx16) CMOS?╄?ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5 |
512M bits DDR2 SDRAM (32M words x 16 bits)
|
Elpida Memory
|
| A82DL3234TG-70 A82DL32X4T A82DL3224 A82DL3224TG-70 |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
|
AMICC[AMIC Technology]
|
