| PART |
Description |
Maker |
| 2SA1400-Z |
High Voltage: VCEO=-400V High speed:tr 1.0ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
| 2SA1412-Z |
High Voltage: VCEO=-400V High speed:tr 0.7ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
| 2SA1200 |
High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semiconductor Co., Ltd
|
| 2SC2712 |
High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 70 700
|
TY Semiconductor Co., Ltd
|
| CSC1573R CSC1573AQ |
1.000W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.070A Ic, 100 - 220 hFE.
1.000W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.070A Ic, 60 - 150 hFE.
|
Continental Device India Limited
|
| KTA1660 |
High Voltage: VCEO=-150V
|
TY Semiconductor Co., Ltd
|
| 2SC4615 |
Large current calcity (IC=1A) High blocking voltage(VCEO 400V)
|
TY Semiconductor Co., Ltd
|
| 2SA1415 |
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semiconductor Co., Ltd
|
| 2SB806 |
High collector to emitter voltage: VCEO?120V. Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
| 1206GA150JAT1A 1808AA105JA11A 1808GC223JA11A 1808H |
CAP 15PF 2000V 5% NP0(C0G) SMD-1206 TR-7 PLATED-NI/SN CAPACITOR, CERAMIC, MULTILAYER, 2000 V, C0G, 0.000015 uF, SURFACE MOUNT, 1206
High Voltage MLC Chips For 600V to 5000V Application
High Voltage MLC Chips For 600V to 5000V Application
|
AVX, Corp.
AVX Corporation
|
| SBF13005 |
30W Bipolar Junction Transistor, 4A Ic, 400V Vceo, 700V Vces
High Voltage Fast-Switching NPN Power Transistor
|
SemiWell Semiconductor
|
