| PART |
Description |
Maker |
| BSS138PS |
60 V, 320 mA dual N-channel Trench MOSFET 320 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP Semiconductors N.V.
|
| P004004BL |
Standard Computer Power Extension Cord, 10A, 18AWG (IEC-320-C14 to IEC-320-C13, Blue Plugs), 4-ft
|
Tripp Lite. All Rights ...
|
| PMFPB6532UP |
20 V, 3.5 A - 320 mV VF P-channel MOSFET-Schottky combination
|
NXP Semiconductors N.V.
|
| FF200R12KT4 |
320 A, 1200 V, N-CHANNEL IGBT MODULE-7
|
Infineon Technologies AG
|
| STL13NM60N |
N-channel 600 V, 0.320 Ω, 10 A PowerFLAT?/a> (8x8) HV MDmesh?/a> II Power MOSFET
|
STMicroelectronics
|
| M74HC352B1R M74HC353M1R M54HC352 M54HC352B1R M54HC |
HC353: DUAL 4 CHANNEL MULTIPLEXER 3 STATE OUTPUT(INV.) HC352: DUAL 4 CHANNEL MULTIPLEXER(INV.)
HC353: DUAL 4 CHANNEL MULTIPLEXER 3 STATEOUTPUTINV. HC352: DUAL 4 CHANNEL MULTIPLEXERINV.
12-Bit, 2.5 us Dual DAC, Serial Input, Programmable Settling Time, M temperature 8-CDIP -55 to 125
VDSL Codec 80-LQFP -40 to 85
12-Bit, Single Channel DAC, Parallel, Voltage Out, Low Power, Asynchronous Update 20-SOIC 0 to 70
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| 70287-1084 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 74 Circuits, 8.13mm (.320) Mating Pin Length, Tin (Sn) Plating
|
Molex Electronics Ltd.
|
| 70287-1250 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 14 Circuits, 8.13mm (.320) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective
|
Molex Electronics Ltd.
|
| 74162-0226 0741620226 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 64 Circuits, 8.13mm (.320) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective
|
Molex Electronics Ltd.
|
| 0702871281 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 76 Circuits, 8.13mm (.320) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective
|
Molex Electronics Ltd.
|
| 0702871280 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 74 Circuits, 8.13mm (.320) Mating Pin Length, 0.76μm (30μ) Gold (Au) SelectivePlating
|
Molex Electronics Ltd.
|
|
