| PART |
Description |
Maker |
| SGP10N60A SGW10N60A SGP10N60A09 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP02N12007 SGP02N120 SGD02N120 SGI02N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N120 SGP15N120 SGP15N12009 SGW15N120FKSA1 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| SGP20N60 SGP20N6009 SGW20N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| ISL9N306AS3ST ISL9N306AP3 ISL9N306AS3STNL |
N-Channel Logic Level PWM Optimized UltraFET TrenchPower MOSFET
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFSL5615PBF IRFS5615PBF IRFS5615PBF-15 |
DIGITAL AUDIO MOSFET
Key Parameters Optimized for Class-D Audio
Key Parameters Optimized for Class-D Audio Amplifier Applications
|
International Rectifier
|
| ISL9N307AS3ST ISL9N307AP3 |
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| APT30DQ60KG |
Fast Recovery Epitaxial Diode; Package: TO-220 [K]; IO (A): 30; VR (V): 600; trr (nsec): 19; VF (V): 2; Qrr (nC): 400; 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-220
|
Microsemi, Corp.
|
