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| 2SK3932-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg VISO Ratings 500 500 11 44 30 11 453.9 6.0 20 5 60 2.16 +150 -55 to +150 2 Unit V V A A V A mJ mJ Remarks VGS=-30V Equivalent circuit schematic Drain(D) Note *1 Note *2 Note *3 Gate(G) Source(S) Note *1:Tch < 150C,Repetitive and Non-repetitive = Note *2:StartingTch=25C,IAS=4.4A,L=43mH, VCC=50V,RG=50 kV/s VDS< 500V = EAS limited by maximum channel temperature kV/s Note *4 and avalanch current. Tc=25C W See to the `Avalanche Energy' graph Ta=25C Note *3:Repetitive rating:Pulse width limited by C maximum channel temperature. C See to the `Transient Theemal impedance' kVrms t=60sec, f=60Hz graph < < < Note *4:IF = -ID, -di/dt=50A/s,VCC= BVDSS,Tch= 150C Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-Source Breakdown Voltaget Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transcondutance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Symbol Rth(ch-c) Rth(ch-a) Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS Tch=25C VDS=500V VGS=0V Tch=125C VDS=400V VGS=0V VGS=30V VDS=0V ID=5.5A VGS=10V ID=5.5A VDS=25V VDS=25V VGS=0V f=1MH VCC=300V ID=5.5A VGS=10V RGS=10 VCC=250V ID=11A VGS=10V IF=11A VGS=0V Tch=25C IF=11A VGS=0V -di/dt=100A/s Tch=25C Test Conditions channel to case channel to ambient Min. 500 3.0 Typ. Max. 5.0 25 250 100 0.70 Units V V A A nA S pF 4.5 10 0.57 9.0 950 1425 130 195 6.0 9.0 16 24 6.0 9.0 33 50 5.5 8.3 25 38 10 15 8.0 12 1.10 1.50 650 5.5 ns nC V ns C Thermalcharacteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Min. Typ. Max. 2.083 58 Units C/W C/W 1 2SK3932-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 80 30 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C 20V 70 25 60 20 50 10V 8.0V PD [W] 40 ID [A] 7.0V 15 30 10 20 5 10 VGS=6.0V 6.5V 0 0 25 50 75 100 125 150 0 0 5 10 15 20 25 30 35 40 Tc [C] VDS [V] 100 Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 10 10 ID[A] 1 1 0.1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 100 VGS[V] gfs [S] ID [A] 2.0 1.8 1.6 1.4 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s pulse test,Tch=25C VGS=6.0V 6.5V 7.0V 2.0 1.8 1.6 1.4 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5.5A,VGS=10V RDS(on) [ ] 1.2 1.0 0.8 0.6 0.4 0.2 0.0 RDS(on) [ ] 8.0V 10V 20V 1.2 1.0 max. 0.8 0.6 0.4 0.2 0.0 typ. 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] 2 2SK3932-01MR Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A FUJI POWER MOSFET 7.0 6.5 6.0 5.5 5.0 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=11A,Tch=25C 12 Vcc= 100V max. 10 250V 400V 8 VGS(th) [V] 4.5 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. VGS [V] 4.0 6 4 2 0 0 10 20 30 40 Tch [C] Qg [nC] 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C Ciss 10 3 10 C [pF] 10 2 Coss IF [A] 1 0.1 0.00 10 1 Crss 10 0 10 -1 10 0 10 1 10 2 10 3 0.25 0.50 0.75 1.00 1.25 1.50 VDS [V] VSD [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 500 450 400 350 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V IAS=4.4A 10 2 tf td(off) 300 IAS=6.6A EAV [mJ] t [ns] 250 200 150 IAS=11A td(on) 10 1 tr 100 50 10 0 0 -1 10 10 0 10 1 10 2 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3932-01MR FUJI POWER MOSFET 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 C,Vcc=50V Single Pulse Avalanche Current I AV [A] 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4 |
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