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20ns Datasheet PDF File

For 20ns Found Datasheets File :: 6076 Search Time::1.938ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M2V28S40TP-8L M2V28S20TP M2V28S20TP-6 M2V28S20TP-7 M2V28S20TP-8 M2V28S30TP-6 M2V28S30TP-7 M2V28S30TP-7L M2V28S30TP-8 M2V28S30TP-8L M2V28S40TP-7 M2V28S40TP-7L M2V28S40TP-8
OCR Text	...f Refresh Current -6 7.5ns 45ns 20ns 5.4ns 67.5ns 120mA 130mA 2mA -7 10ns 50ns 20ns 6ns 70ns 115mA 120mA 135mA 2mA -8 10ns 50ns 20ns 6ns 70ns 115mA 120mA 135mA 2mA Active to Precharge Command Period - Single 3.3V 0.3V power supply - M...
Description	128M Synchronous DRAM
File Size	696.55K / 52 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	M366S1724CT0-C1L M366S1724CT0-C1H
OCR Text	...ge all, auto precharge 10ns 6ns 20ns 20ns 20ns 50ns 12ns 7ns 20ns 20ns 20ns 50ns A0h 60h 00h 00h 14h 14h 14h 32h 22 23 24 25 26 27 28 29 30 31 32 33 34 SDRAM device attributes : General SDRAM cycle time @CAS latency of 2 SDRAM access ...
Description	PC100 Unbuffered DIMM(168pin) SPD Specification(128Mb C-die base)
File Size	54.11K / 7 Page	View it Online	Download Datasheet

				Samsung Semiconductor
Part No.	KMM53232004CK
OCR Text	...ac t rc t hpc -5 50ns 13ns 84ns 20ns -6 60ns 15ns 104ns 25ns pin names pin name function a0 - a11 address inputs dq0-7, dq9-16 dq18-25, dq27-34 data in/out w read/write enable ras0 - ras3 row address strobe cas0 - cas3 column address st...
Description	32MBx32 DRAM Simm Using 16MBx4
File Size	450.08K / 21 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	M366S3323CT0-C1L M366S3323CT0 M366S3323CT0-C1H
OCR Text	...ge all, auto precharge 10ns 6ns 20ns 20ns 20ns 50ns 12ns 7ns 20ns 20ns 20ns 50ns A0h 60h 00h 00h 14h 14h 14h 32h 22 23 24 25 26 27 28 29 30 31 32 33 34 SDRAM device attributes : General SDRAM cycle time @CAS latency of 2 SDRAM access ...
Description	PC100 Unbuffered DIMM 32MB x 64 SDRAM DIMM based on 16MB x 8, 4Banks, 4KB Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
File Size	54.11K / 7 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	KM416S8030BN-G_FL KM416S8030BN KM416S8030BN-G_FH KM416S8030BN-G/FH
OCR Text	...-8/H/L, tRDL=1CLK and tDAL=1CLK+20ns is also supported. * SAMSUNG recommends tRDL=2CLK and tDAL=2CLK+20ns. Rev. 0.1 Aug. 1999 shrink-TSOP KM416S8030BN Preliminary CMOS SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM in New Shrink-T...
Description	128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
File Size	76.60K / 9 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K6R1016V1C-I20 K6R1016V1C K6R1016V1C-C10 K6R1016V1C-C12 K6R1016V1C-C15 K6R1016V1C-C20 K6R1016V1C-I10 K6R1016V1C-I12 K6R1016V1C-I15
OCR Text	...acteristics. Item ICC 12ns 15ns 20ns Added 48-fine pitch BGA. Changed device part name for FP-BGA. Item Previous Symbol Z ex) K6R1016V1C-Z -> K6R1016V1C-F Changed device ball name for FP-BGA. Previous I/O1 ~ I/O8 I/O9 ~ I/O16 1. Added 10ns ...
Description	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
File Size	305.82K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S640432F-TL75 K4S640432F K4S640432F-TC1H K4S640432F-TC1L K4S640432F-TC75 K4S640432F-TL1H K4S640432F-TL1L
OCR Text	...ions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported. SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP. Rev.0.1 Sept. 2001 K4S640432F 4M x 4Bit x 4 Banks Synchronous DRAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compat...
Description	4M x 4Bit x 4 Banks Synchronous DRAM Data Sheet 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
File Size	128.47K / 11 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE2764
OCR Text	...00pF Input Rise and fall Times: 20ns Input Pulse Levels: 0.8V to 2.2V Timing Measurement Reference Level: Inputs: 1.0V and 2.0V Outputs: 0.8V and 2.0V Note 3. Test Conditions: Input Pulse Levels: 0.8V to 2.2V Input Timing Reference Level: 1...
Description	Integrated Circuit NMOS 64K Erasable EPROM 200ns Integrated Circuit NMOS, 64K Erasable EPROM, 200ns
File Size	32.34K / 5 Page	View it Online	Download Datasheet


Part No.	K6F4008S2D-FF850
OCR Text	...lized - change for twhz: 25 to 20ns for 70ns product - change for tdw: 25 to 30ns for 70ns product errata correction - removed ?ttl compatible? from features draft date march 16, 2000 april 24, 2000 october 25, 2001 revision 1.01 octob...
Description	512K X 8 STANDARD SRAM, 85 ns, PBGA48
File Size	147.33K / 9 Page	View it Online	Download Datasheet

For 20ns Found Datasheets File :: 6076 Search Time::1.938ms
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