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  20ns Datasheet PDF File

For 20ns Found Datasheets File :: 6076    Search Time::1.218ms    
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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S640432D-TC_L80 K4S640432D K4S640432D-TC_L10 K4S640432D-TC_L1H K4S640432D-TC_L1L K4S640432D-TC_L75 K4S640432D-TC/L10 K4S640432D-TC/L1H K4S640432D-TC/L1L K4S640432D-TC/L75 K4S640432D-TC/L80
OCR Text ...als are changed one time during 20ns Precharge standby current in non power-down mode CKE VIH(min), CLK VIL(max), tCC = ICC2NS Input signals are stable ICC3P CKE VIL(max), tCC = 10ns mA 6 3 3 25 mA 15 Active standby current ...
Description 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM米4位4银行同步DRAM LVTTL

File Size 127.05K  /  10 Page

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Part No. K6F4008S2D-FF850
OCR Text ...lized - change for twhz: 25 to 20ns for 70ns product - change for tdw: 25 to 30ns for 70ns product errata correction - removed ?ttl compatible? from features draft date march 16, 2000 april 24, 2000 october 25, 2001 revision 1.01 octob...
Description 512K X 8 STANDARD SRAM, 85 ns, PBGA48

File Size 147.33K  /  9 Page

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Part No. K6F2016S4D-FF850
OCR Text ...tion - change for twhz : 25 to 20ns for 70ns product - change for tdw : 25 to 30ns for 70ns product draft date january 6, 2000 april 21, 2000 revision 1.0 cmos sram april 2000 k6f2016s4d family - 2 - product family 1. the parameter is...
Description 128K X 16 STANDARD SRAM, 85 ns, PBGA48

File Size 160.81K  /  9 Page

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    K4S280832B-TL80 K4S280832B K4S280832B-TC10 K4S280832B-TC1H K4S280832B-TC1L K4S280832B-TC75 K4S280832B-TCL10 K4S280832B-T

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S280832B-TL80 K4S280832B K4S280832B-TC10 K4S280832B-TC1H K4S280832B-TC1L K4S280832B-TC75 K4S280832B-TCL10 K4S280832B-TCL1H K4S280832B-TCL1L K4S280832B-TCL75 K4S280832B-TCL80 K4S280832B-TL10 K4S280832B-TL1H K4S280832B-TL1L K4S280832B-TL75 K4S280832B-TC80
OCR Text ...als are changed one time during 20ns CKE VIH(min), CLK VIL(max), tCC = Input signals are stable CKE VIL(max), tCC = 10ns CKE & CLK VIL(max), tCC = CKE VIH(min), CS VIH(min), tCC = 10ns Input signals are changed one time during 20ns ...
Description 4M x 8Bit x 4 Banks Sychronous DRAM 4米8位4银行Sychronous内存

File Size 120.23K  /  10 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S1724CT1-L1L M464S1724CT1-L1L/C1L M464S1724CT1-L1H/C1H M464S1724CT1-C1L M464S1724CT1-C1H M464S1724CT1
OCR Text ...als are changed one time during 20ns CKE VIH(min), CLK VIL(max), tCC = Input signals are stable CKE VIL(max), tCC = 10ns CKE & CLK VIL(max), tCC = CKE VIH(min), CS VIH(min), tCC = 10ns Input signals are changed one time during 20ns CK...
Description 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新,3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新,3.3V的同步DRAM的社民党
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144

File Size 149.06K  /  9 Page

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    SAMSUNG[Samsung semiconductor]
Part No. M464S3323BN0-C1L_L1L M464S3323BN0 M464S3323BN0-C1H_L1H M464S3323BN0-C1H/L1H M464S3323BN0-C1L/L1L
OCR Text ...als are changed one time during 20ns CKE VIH(min), CLK VIL(max), tCC = Input signals are stable CKE VIL(max), tCC = 10ns CKE & CLK VIL(max), tCC = CKE VIH(min), CS VIH(min), tCC = 10ns Input signals are changed one time during 20ns ...
Description 144pin SDRAM SODIMM

File Size 123.62K  /  9 Page

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    INTERSIL[Intersil Corporation]
Part No. ISL6596IRZ-T ISL6596 ISL6596CBZ ISL6596CBZ-T ISL6596CRZ ISL6596CRZ-T ISL6596IBZ ISL6596IBZ-T ISL6596IRZ
OCR Text ... - Low Tri-State Hold-Off Time (20ns) * Support 3.3V and 5V PWM Input * Low Quiescent Supply Current * Power-On Reset * Expandable Bottom Copper Pad for Heat Spreading * Dual Flat No-Lead (DFN) Package - Compliant to JEDEC PUB95 MO-220 QFN-...
Description From old datasheet system
Synchronous Rectified MOSFET Driver

File Size 294.51K  /  10 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH16S64APFC-8L MH16S64APFC-7 MH16S64APFC-7L MH16S64APFC-8 B00002
OCR Text ...y) 10ns 13ns 6ns 7ns N/A N/A 20ns 20ns 20ns 50ns tAC for CL=2 25 26 27 28 29 30 SDRAM Cycle time(3rd highest CAS latency) SDRAM Access form Clock(3rd highest CAS latency) Precharge to Active Minimum Row Active to Row Active Min. R...
Description From old datasheet system
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM

File Size 672.78K  /  55 Page

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    INTERSIL[Intersil Corporation]
Part No. ISL43210IH-T ISL43120 ISL43120IH-T ISL43121 ISL43121IH-T ISL43122 ISL43122IH-T ISL43210
OCR Text ...hing speeds (tON = 28ns, tOFF = 20ns). Cell phones, for example, often face ASIC functionality limitations. The number of analog input or GPIO pins may be limited and digital geometries are not well suited to analog switch performance. This...
Description    Low-Voltage, Single Supply, Dual SPST, SPDT Analog Switches
Low-Voltage/ Single Supply/ Dual SPST/ SPDT Analog Switches

File Size 274.93K  /  13 Page

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For 20ns Found Datasheets File :: 6076    Search Time::1.218ms    
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