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silicon-gate Datasheet PDF File

For silicon-gate Found Datasheets File :: 33550 Search Time::2.141ms
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				Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	M37471M8-386FP M37471E4-XXXSP M37471E8-XXXSP M37471E4-XXXFP M37471E8-XXXFP M37471M8-631SP M37471M8-351FP M37471M8-681SP M37470M2-233SP M37471M2-XXXFP M37471M8-359FP M37470M8-421SP M37471M8-797FP M37471M8-619SP M37471M4-XXXFP M37470E4-XXXSP M37470M8-XXXSP M37470M2-XXXSP
OCR Text	...icrocomputer designed with cmos silicon gate technology. it is housed in a 32-pin shrink plastic molded dip. the m37471m2-xxxsp/fp is a single-chip mi- crocomputer designed with cmos silicon gate technology. it is housed in a 42-pin shrink ...
Description	FUSE RESETTABLE .50A 13.2V SMD SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PQFP56
File Size	642.86K / 46 Page	View it Online	Download Datasheet

				Central Semiconductor Corp
Part No.	CSDD-12M CSDD-12M10 CSDD-12N
OCR Text	silicon controlled rectifier 12 amp, 600 thru 800 volts description: the central semiconductor csdd-12m series type is an epoxy molded sili...gate power, tp=10s p gm 40 w average gate power dissipation p g(av) 1.0 w peak forward gate...
Description	SURFACE MOUNT SILICON CONTROLLED RECTIFIER 12 AMP, 600 THRU 800 VOLTS
File Size	394.92K / 2 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	CMPA801B025F-AMP CMPA801B025F-TB CMPA801B025P
OCR Text	...superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity a...gate-source voltage v gs -10, +2 v dc 25?c power dissipation p diss 77 w storage temperature t stg -...
Description	25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier
File Size	2,073.89K / 14 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	RA03M9595M-101
OCR Text	silicon rf power semiconductors ra rara ra03m9595 03m9595 03m9595 03m9595m mm m rohs compliance , 952-954mhz 3.0w 8.0v, 2 stage a...gate voltage increases. with a gate voltage around 2.5v (minimu m), output power and drain curren...
Description	952-954MHz 3.0W 8.0V, 2 Stage Amp.
File Size	138.43K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	RA55H4452M-101 RA55H4452M10
OCR Text	silicon rf power semiconductors ra55h4452m rohs compliance , 440-520mhz 55w 12.5v, 3 stage amp. for mobile radio ra55h4452m 25 jun ...gate voltage (v gg =0v), only a small leakage current flows into the drain and the rf input signal...
Description	440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
File Size	95.06K / 9 Page	View it Online	Download Datasheet

				ON Semi
Part No.	MAC223A6FP_D ON0362
OCR Text	...PERES RMS 400 thru 800 VOLTS Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, suc...gate-controlled devices are needed. * Off-State Voltages to 800 Volts * All Diffused and Glass Passi...
Description	ISOLATED TRIACs THYRISTORS From old datasheet system
File Size	70.60K / 4 Page	View it Online	Download Datasheet

				WINSEMI SEMICONDUCTOR COMPANY LIMITED
Part No.	WFP740
OCR Text	silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 10a,400v,r ds(on) (max 0.55 ? )@v gs =10v ? ultra-low gate charge(typical 60nc) ? fast switching capability ? 100%avalanche teste...
Description	Silicon N-Channel MOSFET
File Size	592.36K / 7 Page	View it Online	Download Datasheet

				WINSEMI SEMICONDUCTOR COMPANY LIMITED
Part No.	SFP740
OCR Text	silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 10a,400v,r ds(on) (max 0.55 ? )@v gs =10v ? ultra-low gate charge(typical 45nc) ? fast switching capability ? 100%avalanche teste...
Description	Silicon N-Channel MOSFET
File Size	595.96K / 7 Page	View it Online	Download Datasheet

For silicon-gate Found Datasheets File :: 33550 Search Time::2.141ms
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