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  silicon-gate Datasheet PDF File

For silicon-gate Found Datasheets File :: 33550    Search Time::3.313ms    
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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. WFW20N60W
OCR Text ... 20n60w 20n60w rev.a mar .201 1 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 20 a, 6 00v,r ds(on) (max 0.39 ? )@v gs =10v ? ultra-low gate charge(typical 150 nc) ? fast switc...
Description Silicon N-Channel MOSFET

File Size 281.53K  /  3 Page

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    CPWR-AN08

Cree, Inc
Part No. CPWR-AN08
OCR Text silicon carbide mosf ets author: bob callanan, cree, inc. introduction : the silicon carbide (sic) mosfet has unique capabil ities...gate voltage swing than what is customary with sjmosfets or igbts. presently, for the cmf20120d....
Description Application Considerations for Silicon Carbide MOSFETs

File Size 3,022.02K  /  6 Page

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    ON Semi
Part No. MAC15A6FP_D ON0340
OCR Text Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls...gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a co...
Description ISOLATED TRIACs THYRISTORS
From old datasheet system

File Size 122.45K  /  8 Page

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    2SK1228

PANASONIC CORP
Fuji Electric
PANASONIC[Panasonic Semiconductor]
Part No. 2SK1228
OCR Text Silicon MOS FETs (Small Signal) 2SK1228 Silicon N-Channel MOS FET For switching 2.8 -0.3 +0.2 unit: mm 0.650.15 s Features q ...gate protection-diode q Allowing 2.5V drive 0.650.15 1.5 -0.05 +0.25 0.95 2.9 -0.05 ...
Description Silicon N-Channel MOS FET

File Size 33.21K  /  2 Page

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    FineSPN
Part No. FGM100D06V1
OCR Text silicon power networks fine fine spn spn fine silicon power networks fgm100d06v1 preliminary ?half-bridge? igbt features ? 10 s short c...gate emitter voltage 20 v i c continuous collector current t c = 70 (25 ) 100(130) ...
Description HALF-BRIDGE IGBT

File Size 518.95K  /  6 Page

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    MCR716 MCR718

Central Semiconductor Corp
Part No. MCR716 MCR718
OCR Text silicon controlled rectifier 4 amp, 400 thru 600 volts description: the central semiconductor mcr716 and mcr718 are epoxy molded silicon co...gate power, tp=1.0s p gm 0.5 w average gate power dissipation p g (av) ...
Description SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 400 THRU 600 VOLTS

File Size 465.43K  /  2 Page

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    Infineon Technologies A...
Part No. AUIRF2903ZL
OCR Text silicon limited) 235a ? i d (package limited) 160a features ? advanced process technology ? ultra low on-resistance ? 175c op...gate-to-source voltage 20 v e as single pulse avalanche energy (thermally limited) ? 231 mj...
Description AUTOMOTIVE GRADE

File Size 694.06K  /  12 Page

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    Infineon Technologies A...
Part No. AUIRF2804
OCR Text silicon limited) 270a ? i d (package limited) 195a features ? advanced process technology ? ultra low on-resistance ? 175c op...gate-to-source voltage 20 v e as single pulse avalanche energy (thermally limited) ? 540 mj...
Description AUTOMOTIVE GRADE

File Size 738.47K  /  13 Page

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    SSM6618M

Silicon Standard Corp.
Part No. SSM6618M
OCR Text ...ature range power mosfets from silicon standard provide the designer with the best combination of fast switching, ruggedized device design...gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10...
Description N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

File Size 140.74K  /  6 Page

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