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For silicon-gate Found Datasheets File :: 33550 Search Time::3.563ms
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				INTERSIL[Intersil Corporation]
Part No.	IRF9620 FN2283
OCR Text	...This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power...
Description	3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET 3.5A 200V 1.500 Ohm P-Channel Power MOSFET From old datasheet system
File Size	57.96K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9952
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C V DS VGS ID IDM IS PD EAS IAR EAR dv/...
Description	Power MOSFET(Vdss= -30V)
File Size	128.20K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9953
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C VDS VGS ID IDM IS PD EAS IAR EAR dv/d...
Description	Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)
File Size	98.36K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9956
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C VDS VGS ID IDM IS PD EAS IAR EAR dv/d...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)
File Size	98.88K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy P...
Description	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) HEXFET? Power MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	357.87K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy P...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
File Size	307.08K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy P...
Description	-60V Single P-Channel HEXFET Power MOSFET in a TO-262 package -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.175ohm，身份证\u003d- 12A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)
File Size	167.05K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24N IRF9Z24NPBF
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy P...
Description	-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
File Size	105.16K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy P...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
File Size	330.76K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy P...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	158.36K / 10 Page	View it Online	Download Datasheet

For silicon-gate Found Datasheets File :: 33550 Search Time::3.563ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |